Datasheets - IGBT Single Transistors Toshiba

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1. GT50J325 — Datasheet Toshiba -
   IGBT Single Transistors Toshiba GT50J325
   

   Part Number: GT50J325 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(LH) Download Data Sheet Docket: GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching ...
2. GT50J102 — Datasheet Toshiba -
   IGBT Single Transistors Toshiba GT50J102
   

   Part Number: GT50J102 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(LH) Download Data Sheet Docket: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...

3. GT30J324 — Datasheet Toshiba -
   IGBT Single Transistors Toshiba GT30J324
   

   Part Number: GT30J324 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching ...
4. GT25Q102 — Datasheet Toshiba -
   IGBT Single Transistors Toshiba GT25Q102
   

   Part Number: GT25Q102 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(LH) Download Data Sheet Docket: GT25Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q102 High Power Switching Applications Unit: mm ...
5. GT20J101 — Datasheet Toshiba -
   IGBT Single Transistors Toshiba GT20J101
   

   Part Number: GT20J101 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm · · · · ...
6. GT15J301 — Datasheet Toshiba -
   IGBT Single Transistors Toshiba GT15J301
   

   Part Number: GT15J301 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Docket: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...
7. GT10Q101 — Datasheet Toshiba -
   IGBT Single Transistors Toshiba GT10Q101
   

   Part Number: GT10Q101 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(N) Download Data Sheet Docket: GT10Q101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm The 3rd ...
8. GT30J301 — Datasheet Toshiba -
   IGBT Single Transistors Toshiba GT30J301
   

   Part Number: GT30J301 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Docket: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL ...
9. GT15J321 — Datasheet Toshiba -
   IGBT Single Transistors Toshiba GT15J321
   

   Part Number: GT15J321 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Docket: GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Fast Switching ...
10. GT10J303 — Datasheet Toshiba -
    IGBT Single Transistors Toshiba GT10J303
    

    Part Number: GT10J303 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Docket: Specifications: Transistor Type: HP SW IGBT Max Voltage Vce Sat: 2.7 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: ...
11. GT20J321 — Datasheet Toshiba -
    IGBT Single Transistors Toshiba GT20J321
    

    Part Number: GT20J321 Manufacturer: Toshiba Description: IGBT, 600 V, TO-220NIS Download Data Sheet Specifications: Transistor Type: IGBT Max Voltage Vce Sat: 2.45 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: TO-220NIS ...
12. GT20J301 — Datasheet Toshiba -
    IGBT Single Transistors Toshiba GT20J301
    

    Part Number: GT20J301 Manufacturer: Toshiba Description: IGBT, 600 V, TO-3P(N) Download Data Sheet Specifications: Transistor Type: HP SW IGBT Max Voltage Vce Sat: 2.7 V Collector-to-Emitter Breakdown Voltage: 600 V Transistor Case Style: TO-3P (N) ...
13. GT15Q301 — Datasheet Toshiba -
    IGBT Single Transistors Toshiba GT15Q301
    

    Part Number: GT15Q301 Manufacturer: Toshiba Description: IGBT, 1200 V, TO-3P(N) Download Data Sheet Specifications: Transistor Type: HP SW IGBT Max Voltage Vce Sat: 2.7 V Collector-to-Emitter Breakdown Voltage: 1200 V Transistor Case Style: TO-3P ...

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