Datasheets
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- Part Number: SPD18P06P G Manufacturer: Infineon Description: MOSFET, P-CH, 60 V, 18.6 A, TO-252 Download Data Sheet Docket: SPD18P06P G SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance ...
- Part Number: SPD15P10PL G Manufacturer: Infineon Description: MOSFET, P-CH, 100 V, 15 A, TO252-3 Download Data Sheet Docket: SPD15P10PL G SIPMOS® Power-Transistor Features · P-Channel · Enhancement mode · logic level · Avalanche rated · Pb-free ...
- Part Number: SPD15P10P G Manufacturer: Infineon Description: MOSFET, P-CH, 100 V, 15 A, TO252-3 Download Data Sheet Docket: SPD15P10P G SIPMOS Small-Signal-Transistor ® Product Summary V DS R DS(on),max ID -100 0.24 -15 V A Features · P-Channel · ...
- Part Number: SPD04P10PL G Manufacturer: Infineon Description: MOSFET, P-CH, 100 V, 4.2 A, TO252-3 Download Data Sheet Docket: SPD04P10PL G SIPMOS Power-Transistor ® Product Summary V DS R DS(on),max ID -100 850 -4.2 V m A Features · P-Channel · ...
- Part Number: IPD640N06L G Manufacturer: Infineon Description: MOSFET, N-CH, 60 V, 18 A, TO-252 Specifications: Continuous Drain Current Id: 18 A Drain Source Voltage Vds: 60 V MSL: MSL 1 - Unlimited Number of Pins: 3 On Resistance Rds(on): 0.047 ...
- Part Number: IPD60R2K0C6 Manufacturer: Infineon Description: MOSFET, N-CH, 600 V, 2.4 A, TO252-3 Download Data Sheet Docket: GHL@?M +
- Part Number: IPD60R1K4C6 Manufacturer: Infineon Description: MOSFET, N-CH, 600 V, 3.2 A, TO252-3 Download Data Sheet Docket: GHL@?M +
- Part Number: IPD600N25N3 G Manufacturer: Infineon Description: MOSFET, N-CH, 250 V, 25 A, TO252-3 Download Data Sheet Docket: IPD600N25N3 G OptiMOSTM3 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product ...
- Part Number: IPD320N20N3 G Manufacturer: Infineon Description: MOSFET, N-CH, 200 V, 34 A, TO252-3 Download Data Sheet Docket: IPD320N20N3 G OptiMOSTM3 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product ...
- Part Number: IPD110N12N3 G Manufacturer: Infineon Description: MOSFET, N-CH, 120 V, 75 A, TO252-3 Download Data Sheet Docket: IPD110N12N3 G IPS110N12N3 G %&$!#TM3Power-Transistor Features R ( 492 ??6= ?@ C == 6= > 2 6G R I46=6?E E 492 C IR ;I[# AC ...
- Part Number: RB085B-30TL Manufacturer: Rohm Description: DIODE, SCHOTTKY, 30 V, 5 A, SOT-428 Download Data Sheet Docket: Data Sheet Schottky Barrier Diode RB085B-30 Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : ...
- Part Number: 2SD2675TL Manufacturer: Rohm Description: TRANSISTOR, NPN, 30 V, 1 A, SC-96 Specifications: Collector Emitter Voltage V(br)ceo: 30 V DC Collector Current: 1 A DC Current Gain: 270 MSL: MSL 1 - Unlimited Number of Pins: 3 Power ...
- Part Number: AUIRLR3915 Manufacturer: International Rectifier Description: MOSFET, N-CH, 55 V, 61 A, DPAK Specifications: Continuous Drain Current Id: 30 A Drain Source Voltage Vds: 55 V MSL: MSL 1 - Unlimited Number of Pins: 3 On Resistance ...
- Part Number: AUIRLR3105 Manufacturer: International Rectifier Description: MOSFET, N-CH, 55 V, 25 A, DPAK Specifications: Continuous Drain Current Id: 25 A Drain Source Voltage Vds: 55 V MSL: MSL 1 - Unlimited Number of Pins: 3 On Resistance ...
- Part Number: DSR6V600D1-13 Manufacturer: Diodes Description: DIODE, RECTIFIER, 600 V, 6 A, TO252 Download Data Sheet Docket: DSR6V600D1 6A DIODESTAR RECTIFIER Features · Mechanical Data Specifications: Diode Type: Fast Recovery Forward Current ...
- Part Number: CSD01060E Manufacturer: Cree Description: DIODE, SCHOTTKY, 1 A, 600 V, TO-252 Download Data Sheet Docket: CSD01060Silicon Carbide Schottky Diode Zero r Features ecovery® RectifieR Specifications: Forward Current If(AV): 1 A Forward ...
- Part Number: C3D04060E Manufacturer: Cree Description: SCHOTTKY RECTIFIER, 4 A, 600 V TO-252 Download Data Sheet Specifications: Diode Type: Schottky Forward Current If(AV): 4 A Forward Surge Current Ifsm Max: 31.9 A Forward Voltage VF Max: 1.7 V ...
- Part Number: C3D02060E Manufacturer: Cree Description: Silicon Carbide (SiC) Schottky Diode Download Data Sheet Specifications: Diode Type: Zero Recovery Forward Current, If(AV): 2 A Forward Surge Current Max, Ifsm: 21 A Forward Voltage Max, VF: ...
- Part Number: SUR50N03-06P Manufacturer: Vishay Description: MOSFET, N, D-PAK Download Data Sheet Docket: SUR50N03-06P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY Specifications: Alternate Case Style: ...
- Part Number: SUD40N08-16 Manufacturer: Vishay Description: MOSFET, N, D-PAK Simulation Model Specifications: Alternate Case Style: D-PAK Continuous Drain Current Id: 40 A Current Id Max: 40 A Drain Source Voltage Vds: 80 V Mounting Type: SMD On ...
