Memory FRAM 4M (512 K x 8) Bit SPI MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile ...
Memory FRAM 4M (512 K x 8) Bit SPI MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile ...
Memory FRAM 4M (512 K x 8) Bit SPI MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile ...
Memory FRAM 4M (512 K x 8) Bit SPI MB85RS4MTY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile ...
The MR48V256C is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) fabricated in silicon-gate CMOS technology. As FeRAM cells are nonvolatile, backup batteries to hold data can be eliminated. And, data can be read and ...