thinQ!™ Generation 5 is Infineon’s leading-edge technology for SiC Schottky Barrier diodes.
The company has combined its proprietary diffusion soldering process, launched with G3, with a new, more compact design and thin wafer technology. The resulting new family of products delivers greater efficiency over all load conditions thanks to improved thermal properties and a lower figure of merit (Qc × Vf).
thinQ!™ Generation 5 has been designed to complement Infineon´s 650V CoolMOS™ families, thus ensuring compliance with the most stringent application requirements in this voltage range.
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| Experimental results: Efficiency comparison between the three generations of Infineon's 8A SiC Diodes a) Absolute values b) Refers to thinQ!™ Gen 5 (CCM PFC, high line, Pout max=1800 W, fSW=65 kHz, THS=60°C, MOSFET: IPW60R075CP) |
Features
- Vbr at 650V
- Improved figure of merit (Qc × Vf)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature-independent switching behavior
- High operating temperature (Tj max 175°C)
- Improved surge capability
- Pb-free lead plating
- 10 years experience in manufacturing SiC diodes
Applications
- Telecom/server SMPS
- Solar/UPS
- PC silverbox
- LED/LCD TV
- Motor drives
- HID lighting
