News & Press Releases - Power
Subsection: "Power"
Search results: 974 Output: 1-10
- Targeting industrial and energy applications with motor drives for air conditioning, home appliances and factory automation, as well as power control in charging stations, energy storage systems, and power supply units STMicroelectronics’ ...Nov 25, 2024
- EPC announces the availability of the EPC9159, a 48 V / 12 V, LLC converter designed for high-density 48 V server power and DC-DC converters. This reference design can deliver 1 kW of power in a tiny 17.5 mm × 22.8 mm footprint for a power ...Sep 21, 2023
- EPC introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm × 5 mm footprint. These devices are the lowest on-resistance (R DS(on) ) FETs in the market at 150 ...Dec 20, 2022
- The EPC9176 GaN-based inverter reference design enhances motor drive system performance, range, precision, torque, all while simplifying design. The extremely small size of this inverter allows integration into the motor housing resulting in the ...Oct 20, 2022
- EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones. The EPC23101 eGaN IC plus ...Dec 31, 2021
- 65 Amp, AMR Based, Fully Isolated Current Sensor available in 3.3- and 5-Volt versions ACEINNA announced the high current 65 Amp MCx1101 Current Sensor, the industry’s most accurate and highest bandwidth current sensor. Designed for WBG ...Dec 20, 2021
- ON Semiconductor has announced a pair of 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market. As sales of EV continue to grow, infrastructure ...Jul 1, 2021
- UnitedSiC continues to expand its FET portfolio with the introduction of six new 650 V and 1200 V options, all housed in the industry standard D2PAK-7L surface mount package. Available in 30, 40, 80 and 150 mΩ versions, these latest SiC FETs ...Jun 8, 2021
- Vishay Intertechnology introduced a versatile new 30 V n-channel TrenchFET® Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally ...May 27, 2021
- Highest efficiency is a key requirement for today’s power electronics. Therefore, Infineon Technologies introduces its latest isolated EiceDRIVER™ 2L-SRC Compact (1ED32xx) gate driver family in a compact form factor. The gate driver ...May 18, 2021
