UnitedSiC continues to expand its FET portfolio with the introduction of six new 650 V and 1200 V options, all housed in the industry standard D2PAK-7L surface mount package. Available in 30, 40, 80 and 150 mΩ versions, these latest SiC FETs represent another step forward in accelerating migration to SiC across applications such as server and telecom power supplies, industrial battery chargers and power supplies, EV on-board chargers and DC-DC converters.
The D2PAK-7L SiC FETs support significantly heightened switching speeds, with a Kelvin source connection improving gate drive return performance, as well as offering industry-leading thermal capabilities. Through the utilization of Ag Sintering, die attachments can be done on conventional PCBs as well as complex insulated metal substrate (IMS) arrangements. In addition, they exhibit excellent creepage and clearance figures of 6.7 mm and 6.1 mm respectively – meaning the highest degrees of operational safety can be assured even at elevated voltages.
The new D2PAK-7L devices are fully supported by UnitedSiC’s FET-Jet Calculator™. Utilizing this free online resource, engineers can assess the different operational parameters needed for their application, carry out detailed performance comparisons and then identify which is the best SiC solution for their design requirements quickly and with confidence.
Pricing (1000-up, FOB USA) for the new 650 V D2PAK-7L SiC FETs range from $3.27 for the UF3C065080B7S to $7.54 for the UF3SC065030B7S. For the 1200 V D2PAK-7L devices, prices range from $3.10 for the UF3C120150B7S to $10.91 for the UF3SC120040B7S. All devices are available from UnitedSiC authorized distributors.
