Toshiba Extends Ultra-Efficient, High-Speed SMD MOSFET Family to 250 V

Latest UMOS VIII-H MOSFETS provide compact, low RDS(ON), low Ciss surface mount switching solutions from 60 V to 250 V

Toshiba Electronics Europe has announced additions to its UMOS VIII-H ultra-efficient MOSFET family. The 32 new devices will help designers to save space and reduce losses in synchronous rectification and primary and secondary side switching applications and other high-speed designs requiring device ratings from 60 V to 250 V.

The latest MOSFETs offer voltage rating options of 60 V, 80 V, 100 V, 150 V, 200 V and 250 V, with each device available in a choice of TSON Advance or SOP Advance flat SMD packages. Respective board mounting areas are only 3 × 3 mm and 5 × 6 mm, whilst on resistance (R_DS(ON)) values of many members of the family are best in class. For example the 100 V TPH4R50ANH (maximum R_DS(ON) of 4.5 mΩ @ V_GS = 10 V) and the 200 V TPH2900ENH (maximum R_DS(ON) of 29 mΩ @ V_GS = 10 V) combine the lowest R_DS(ON) ratings with very low gate charge (Q_g) and input capacitance (C_iss).

Toshiba’s new UMOS VIII-H MOSFETs are based on the company’s eighth generation UMOS trench semiconductor process. This process delivers significant improvements in R_DS(ON) and C_iss characteristics to optimize efficiency and switching speeds while minimizing radiated noise.

Target applications for the 60 V – 250 V SMD MOSFETs will include AC/DC and DC/DC conversion in industrial systems, digital home appliances, computing equipment and gaming products. The 80~150 V devices will be particularly well-suited to power supplies in various elements of telecommunications application.

toshiba-components.com