Vishay Intertechnology released the first AEC-Q101-qualified TrenchFET® power MOSFETs to feature ThunderFET® technology. To increase efficiency and save space in automotive applications, the Vishay Siliconix 100 V n-channel SQJ402EP, SQJ488EP, and SQD50N10-8m9L offer some of the lowest on-resistance values available in the PowerPAK® SO-8L and DPAK packages.
Vishay's ThunderFET technology enables lower on-resistance per die area. In applications where lower on-resistance is crucial, this allows the SQD50N10-8m9L in the DPAK package to provide exceptionally low values down to 8.9 mΩ at 10 V. When space is at a premium, the SQJ402EP and SQJ488EP offer comparable values down to 11 m? at 10 V in the compact 5 mm by 6 mm PowerPAK® SO-8L package, which is half the size of the DPAK.
With continuous drain currents to 50 A, the MOSFETs released today are optimized for injector boost applications in automotive engine control units and flyback converters for lighting ballasts in lighting control units. With low gate charge down to 18 nC, the devices provide low on-resistance times gate charge − a key figure of merit (FOM) for MOSFETs in DC / DC converter applications − to reduce switching losses and improve total system efficiency.
The SQJ402EP, SQJ488EP, and SQD50N10-8m9L are 100 % Rg and UIS tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU. The devices operate over a temperature range of -55 °C to +175 °C.
Device Specification Table:
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Part #
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Package
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DPAK (TO-252)
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PowerPAK SO-8L
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PowerPAK SO-8L
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|
|
VDS (V)
|
100
|
100
|
100
|
|
|
VGS (V)
|
20
|
20
|
20
|
|
|
RDS(ON)
(mΩ) |
@10 V
|
8.9
|
11
|
21
|
|
@4.5 V
|
11.2
|
14
|
25.8
|
|
|
QG (nC)
|
46
|
34
|
18
|
|
|
ID (A)
|
50
|
32
|
42
|
|
|
IDM (A)
|
200
|
75
|
170
|
|
