Vishay Intertechnology introduces a new dual n-channel TrenchFET® power MOSFET in the ultra-compact, thermally enhanced PowerPAK® SC-70 package. Designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix SiA936EDJ features the industry's lowest on-resistance for 20 V (12 V VGS and 8 V VGS) devices at 4.5 V and 2.5 V gate drives in the 2 mm by 2 mm footprint area.
Product Benefits:
- Low on-resistance of 34 mΩ (4.5 V), 37 mΩ (3.7 V), and 45 mΩ (2.5 V)
- Promotes more efficient use of power and longer battery run times
- Built-in ESD protection of 2000 V
- Integrates two MOSFETs in one compact PowerPAK SC-70 package to save PCB space
- Thermally enhanced package with a small footprint of 2.05 × 2.05 mm
- 100 % Rg tested
- Halogen-free according to the JEDEC JS709A definition
- Compliant to RoHS Directive 2011/65/EU
The Key Specifications:
- Drain-source voltage: 20 V
- Gate-source voltage: ±12 V
- On-resistance:
- 34 mΩ max at 4.5 V
- 37 mΩ max at 3.7 V
- 45 mΩ max at 2.5 V
Applications:
- Load and charger switches
- DC/DC converters
- H-bridges
- battery protection for power management
Diagrams of Popular Applications for SiA936EDJ:
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Load / Static switch
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DC-DC power stage
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The Perspective:
The SiA936EDJ combines extremely low on-resistance with built-in ESD protection of 2000 V in one compact device. Its on-resistance at 2.5 V is 11.7 % lower than the closest competing 8 V VGS device — while providing higher (G-S) guard band — and 15.1 % lower than the closest competing device with a 12 V VGS. These low on-resistance values allow designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times. In addition, by integrating two MOSFETs into one compact package, the dual SiA936EDJ simplifies designs, lowers the overall component count, and saves critical PCB space.
Availability:
Samples and production quantities of the SiA936EDJ are available now, with lead times of 12 to 14 weeks for larger orders.
