New low RDSon small-signal MOSFETs for automotive

NXP have just released 10 low R_DSon small-signal MOSFETs qualified for automotive solutions in DFN2020MD-6, SOT23 and SOT457 packages. Based on Trench technology, the new products offer V_DS voltage of 20 – 80 V, ESD protection of up to 4 kV HBM and a drain-source-on-state resistance down to 27 mOhm.

Additionally, three types housed in DFN2020MD-6 offer the unique feature of 100% tin-plated solderable sidepads for optical solder inspection, and an exposed drain pad for excellent thermal conduction.

All products are automotive qualified and suitable for energy efficiency designs in applications as relay and high-speed line drivers, low-side and high-side load switches and switching circuits.

Datasheet download

• PMPB85ENEA in DFN2020MD-6
• PMPB215ENEA in DFN2020MD-6
• PMPB95ENEA in DFN2020MD-6
• PMV130ENEA in SOT23
• PMV250EPEA in SOT23
• PMV48XPA in SOT23
• PMN40UPEA in SOT457
• PMN27XPEA in SOT457
• PMN42XPEA in SOT457
• PMN70XPEA in SOT457

Features and benefits

• Low R_DSon down to 27 mOHm
• Trench MOSFET technology
• Up to 4 kV ESD protection according to HBM
• AEC-Q101 qualified

Key applications

• Relay drivers
• High-speed line drivers
• Low-side and low-side load switches
• Switching circuits

nxp.com