Central Semiconductor introduces its newest energy efficient, high voltage UltraMOS™ MOSFET designed to minimize total conduction losses while maximizing power density. The CDM22012-800LRFP is a 12 A, 800 V MOSFET in the TO-220FP (Full Pack) package. The low rDS(ON) of 0.37 Ω and low total gate charge of 7.6 nC are key energy efficiency characteristics of this UltraMOS™ device, which surpass the operational performance of similarly rated standard MOSFETs.
The 800V UltraMOS™ MOSFETs are ideal for power supplies, power inverters and the perfect pairing with Central’s HyperFast rectifiers, to provide a superior high speed operational benefit for phase shift compensation in Power Factor Correction (PFC) applications. UltraMOS™ devices are available in industry standard packages as well as in custom packages.
Pricing for the CDM22012-800LRFP is $1.90 each for 1,000 pieces packed in sleeves or supplied bulk and available from Digi-Key, Future Electronics and Mouser Electronics. Sample devices are available upon request direct from Central Semiconductor. In addition to the 800V device, Central has 600 V and 700 UltraMOS™ devices available. A 6 A, 800 V device is also planned for release later this year.
