Everspin Technologies has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. These features enable storage system vendors to enhance the reliability and performance of storage devices and systems by delivering protection against power loss without the use of supercapacitors or batteries. Enterprise SSD designers can take advantage of fast persistent memory that is inherently power fail-safe while also reducing write amplification and over-provisioning, common limitations for NAND Flash based SSDs.
This latest ST-MRAM product provides 4 times the capacity of Everspin’s current 256 Mb DDR3 ST-MRAM and will be shown running in Everspin’s nvNITRO™ storage accelerator products.
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| Everspin’s nvNITRO storage accelerator. |
The 1 Gb MRAM is produced in 28 nm CMOS on 300 mm wafers in partnership with GLOBALFOUNDRIES, utilizing Everspin’s patented perpendicular magnetic tunnel junction (pMTJ) technology. The rapid development of the 1 Gb part is a direct result of the high degree of scalability of the pMTJ, moving from 40 nm to 28 nm processes in less than one year through our close partnership with Global Foundries.
