Optimal power efficiency using the latest technology sets a new industry standard for high power density applications
Alpha and Omega Semiconductor introduced the AONX38168, which utilizes the latest 25 V N-Channel MOSFET Technology. The XSPairFET includes the low-side and high-side MOSFET in a leadless surface mount package, (5 mm × 6 mm outline) ideal for synchronous DC/DC converter applications.
The AONX38168 is designed with the latest bottom source packaging technology which has a lower switch node ringing due to lower parasitic inductance. The new device offers a higher power density comparative to existing solutions, and is well suited for server and telecommunication markets. The AONX38168 is the newest generation of XSPairFETs, offering the lowest on-state resistance and best Figure of Merits (RDS(ON) × QG). The XSPairFET has bottom source connection for the low-side MOSFET which can result in improved thermal performance, simplified layout, and reduced EMI.
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| Transistors connection to package terminals. |
Pricing and Availability
The AONX38168 is immediately available in production quantities with a lead-time of 12-14 weeks. The unit price for 1,000 pieces is $1.7.
| Part Number | Package | VDS (V) |
VGS (±V) |
RDS(ON) (mΩ max) at VGS = |
CISS (pF) |
COSS (pF) |
CRSS (pF) |
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| 10 V | 4.5 V | ||||||||
| AONX38168 | DFN 5×6 | High Side (Q1) | 25 | 12 | 3.3 | 5 | 1150 | 460 | 40 |
| Low Side (Q2) | 25 | 12 | 0.8 | 1.05 | 4520 | 1270 | 170 | ||
