News & Press Releases - Power - 3

Alpha and Omega Semiconductor announced the release of, AOTL66518 and AOB66518L , a 150 V MOSFET with low on-resistance and a high Safe Operating Area (SOA) capability designed for demanding applications in Telcom Hot Swap. AOS designed these ...

Infineon Technologies has launched a 1200 V transfer molded silicon carbide (SiC) integrated power module (IPM) and concludes the massive roll-out of SiC solutions for this year. The CIPOS™ Maxi IPM IM828 series is the industry’s first ...

Fourth-Generation N-Channel Device Lowers Conduction and Switching Losses, Increases Efficiency Vishay Intertechnology introduced a new device in its fourth generation of 600 V EF Series fast body diode MOSFETs. Providing high efficiency for ...

Ampleon announced the BLP2425M10S250P , a 250 W RF power transistor for solid-state cooking and industrial, scientific and medical (ISM) applications in the 2400 MHz to 2500 MHz frequency band. Using Ampleon’s tenth-generation LDMOS process, ...

EPC introduces 170 V, 6.8 milliohm EPC2059 eGaN® FET, offering designers a device that is smaller, more efficient, more reliable, and lower cost than currently available devices for high performance 48 V synchronous rectification. Efficient ...

Contemporary power system designs demand high power density levels and small form factors to maximize system-level performance. Infineon Technologies tackles this challenge by focusing on system innovation with enhancements on the component level. ...

Device offers significantly reduced losses thereby increasing power solution efficiency Toshiba Electronics Europe has launched a 1200 V silicon carbide (SiC) MOSFET for high power industrial applications including 400 V AC input AC-DC power ...

The PA22 from Apex Microtechnology establishes a new benchmark in power amplifier performance for a variety of applications where high speed and short-term power dissipation is a must. With this device, designers are offered exceptional power ...

These new generation 200 V eGaN® FETs are ideal for 48 V OUT synchronous rectification, class-D audio, solar microinverters and optimizers, and multilevel, high-voltage AC/DC converters EPC advances the performance capability while lowering the ...

Alpha and Omega Semiconductor announced the release of, AONS32310 , a 30 V MOSFET with low on-resistance and a high Safe Operating Area (SOA) capability which is ideally suited for demanding applications such as hot swap and e-fuse. A high SOA is ...