News & Press Releases - Discretes - 4

Ampleon has released the BLF989E RF power transistor, which uses the very latest ninth-generation high-voltage (50 V) LDMOS process technology. The BLF989E has been designed to deliver the highly efficient Doherty amplifiers required by the next ...

Space-Saving Device Features Maximum R DS(ON) Down to 8.05 mΩ and Qg of 6.5 nC in Compact PowerPAIR® 3×3S Package Vishay Intertechnology introduced a new 40 V n-channel MOSFET half bridge power stage that delivers increased power ...

Central Semiconductor introduces the CBRDFA4-100 , a 4.0 A, 1000 V full wave bridge rectifier with a glass passivated die. Packaged in a low profile 1.55 mm durable epoxy BR DFN-A case, this device is ideal for power supply and fast charger ...

Littelfuse, Inc. announced a new series of 50 A unidirectional TVS Diode Arrays (SPA® Diodes). Compared to solutions currently available on the market, the SP1250-01ETG 50 A unidirectional TVS diode arrays provide superior protection via lower ...

TrenchFET® Device Offers Typical RDS(ON) of 61 mΩ and FOM of 854 mΩ nC in 10.89 mm 2 Package Vishay Intertechnology introduced a new 200 V n-channel MOSFET that offers industry-low typical on-resistance of 61 mΩ at 10 V in the ...

New SRF4530A Series Common Mode Chip Inductors are Optimal Noise Suppression Solutions for a Broad Range of High Temperature Electronics Applications Bourns, Inc. introduced a new CANbus Common Mode Chip Inductor series. The new AEC-Q200 compliant ...

These new generation 200 V eGaN® FETs are ideal for 48 V OUT synchronous rectification, class-D audio, solar microinverters and optimizers, and multilevel, high-voltage AC/DC converters EPC advances the performance capability while lowering the ...

Alpha and Omega Semiconductor announced the release of, AONS32310 , a 30 V MOSFET with low on-resistance and a high Safe Operating Area (SOA) capability which is ideally suited for demanding applications such as hot swap and e-fuse. A high SOA is ...

Automotive-qualified devices curb power consumption to boost vehicle fuel economy Toshiba Electronics Europe GmbH (“Toshiba) has developed a series of new high-efficiency N-channel MOSFETs for automotive applications that are based on the ...

Offered in PowerPAK® SO-8 Single Package, Device Features Best in Class Gate Charge Times R DS(ON) FOM Vishay Intertechnology introduced the first-ever -30 V p-channel power MOSFET to offer on-resistance of 1.7 mΩ at 10 V. With its ...