News & Press Releases - Discretes - 8

Efficient dual device is ideal for automotive headlight applications Toshiba Electronics Europe has released a dual MOSFET with high levels of ESD protection. The new SSM6N813R is intended for use in rugged automotive applications, including use as ...

48% R DS(on) improvement, increased power up to 300 W Nexperia introduced a portfolio of low R DS(on) 40 V AEC-Q101 MOSFETs targeting space-constricted, increased-power modules in demanding powertrain applications. Housed in the miniature, LFPAK33 ...

Negligible reverse recovery current, high surge capability, and 175 C max. operating junction temperature Littelfuse introduced two second-generation series of 650 V, AEC-Q101-qualified silicon carbide (SiC) Schottky Diodes. The LSIC2SD065CxxA and ...

Ampleon announced the 500-Watt BLC2425M10LS500P LDMOS RF power transistor designed for pulsed and CW applications operating in the 2400 MHz to 2500 MHz frequency range. Suitable for use in a wide range of industrial, consumer and professional ...

Superjunction Device Lowers Conduction and Switching Losses, Increases Efficiency in Telecom, Industrial, and Enterprise Applications Vishay Intertechnology introduced the latest device in its fourth generation of 600 V E Series power MOSFETs. ...

For Notebook Computer and Mobile Devices, Rectifiers Provide Current Ratings of 30 A to 40 A in TO-220AB Package Vishay Intertechnology introduced four new 100 V and 120 V TMBS® Trench MOS Barrier Schottky rectifiers that provide up to 20 mV ...

Ensures no compromise between protection and operating efficiency Nexperia introduced the latest addition to its NextPower Live linear-mode MOSFET family, PSMN3R7-100BSE delivers a best-in-class combination of strong Safe Operating Area (SOA) and ...

Enables high-frequency, high-efficiency power control applications such as electric and hybrid vehicles, datacenters, and auxiliary power supplies Littelfuse introduced its first 1700 V SiC MOSFET, the LSIC1MO170E1000 , expanding its portfolio of ...

Ampleon announced the high power rugged BLF189XRA RF power transistor aimed at broadcast FM radio applications transmitting in the 88 108 MHz frequency range. Operating from an industry standard 50 V power source the BLF189XRA delivers over 1,600 ...

Lower losses and higher switching deliver highly efficient, space-saving solutions and reduced overall system costs ON Semiconductor has announced an expansion of its silicon carbide (SiC) Schottky diode portfolio to include devices specifically ...