News & Press Releases - Power - 9

Infineon Technologies expands its product portfolio of the thin-wafer technology TRENCHSTOP™5 IGBT. The new product family is offering up to 40 A 650 V IGBT, co-packed with a full rated 40 A diode in a surface mounting TO-263-3 also known as ...

Industry’s only available devices compatible with Power-SO8 footprint to meet new standard for battery-powered equipment. Nexperia announced that two of its LFPAK56-packaged portfolio of MOSFETs are now available with improved creepage and ...

Microsemi Corporation announced its extremely low inductance package dedicated to high current, low specific on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules. The new package, developed specifically for the company's SP6LI ...

Torex Semiconductor has launched the XC9280 series of step-down synchronous DC/DC converters, which are compatible with 18 V input and 3 A peak output and have a 70% smaller package area than our previous products. Products in the XC9280 series ...

Global energy efficiency standards often prohibit manufacturers from importing or selling products that do not meet these standards. In order to comply with specific minimum requirements, energy losses have to be reduced by using the latest ...

New family of converters supports dynamic voltage scaling (DVS)/voltage margining to power next generation chipsets and FPGAs Alpha and Omega Semiconductor (AOS) introduced a new family of EZBuck™ regulators featuring I 2 C control. The first ...

Highly integrated synchronous power module features up to 95 percent efficiency for space- and height-constrained applications Texas Instruments (TI) introduced a 5.5-V step-down power module that delivers true, continuous 6-A output current with ...

Reduced on-resistance resulting from the use of a new, small, low-resistance package Toshiba Electronics Europe has released two new MOSFETs housed in the small low-resistance SOP Advance (WF) package in 5 mm × 6 mm size, as new additions to ...

Class-leading current consumption prolongs battery life in remote control applications ROHM has recently announced the development of a boost DC/DC converter with built-in MOSFET featuring the lowest current consumption in the industry, making it ...

GaN Systems unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of GaN Systems’ own 90 A part and ...