Datasheet AD7862 (Analog Devices) - 4

ManufacturerAnalog Devices
DescriptionSimultaneous Sampling Dual 250 kSPS 12-Bit ADC
Pages / Page17 / 4 — AD7862. Parameter. Version1. Version. Units. Test Conditions/Comments. …
File Format / SizePDF / 454 Kb
Document LanguageEnglish

AD7862. Parameter. Version1. Version. Units. Test Conditions/Comments. ABSOLUTE MAXIMUM RATINGS*. ORDERING GUIDE. Input. Relative

AD7862 Parameter Version1 Version Units Test Conditions/Comments ABSOLUTE MAXIMUM RATINGS* ORDERING GUIDE Input Relative

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AD7862 A B S Parameter Version1 Version Version Units Test Conditions/Comments
LOGIC OUTPUTS Output High Voltage, VOH 4.0 4.0 4.0 V min ISOURCE = 200 µA Output Low Voltage, VOL 0.4 0.4 0.4 V max ISINK = 1.6 mA DB11–DB0 Floating-State Leakage Current ±10 ±10 ±10 µA max Floating-State Capacitance4 10 10 10 pF max Output Coding AD7862-10, AD7862-3 Twos Complement AD7863-2 Straight (Natural) Binary CONVERSION RATE Conversion Time 3.6 3.6 3.6 µs max For Both Channels Track/Hold Acquisition Time2, 3 0.3 0.3 0.3 µs max POWER REQUIREMENTS VDD +5 +5 +5 V nom ±5% for Specified Performance IDD Normal Mode 15 15 15 mA max Standby Mode 25 25 25 µA max Logic Inputs = 0 V or VDD Power Dissipation Normal Mode 75 75 75 mW max Typically 60 mW Standby Mode 125 125 125 µW max Typically 75 µW NOTES 1Temperature ranges are as follows: A, B Versions: –40°C to +85°C; 4Sample tested @ +25°C to ensure compliance. S Version: –55°C to +125°C. Specifications subject to change without notice. 2 Performance measured through full channel (multiplexer, SHA and ADC). 3See Terminology.
ABSOLUTE MAXIMUM RATINGS*
Lead Temperature, (Soldering 10 sec) . +260°C (T Ceramic DIP Package, Power Dissipation . 670 mW A = +25°C unless otherwise noted) V θ DD to AGND . –0.3 V to +7 V JA Thermal Impedance . 116°C/W V Lead Temperature, (Soldering 10 sec) . +260°C DD to DGND . –0.3 V to +7 V AGND to DGND . ± 0.3 V SOIC Package, Power Dissipation . 450 mW Analog Input Voltage to AGND θJA Thermal Impedance . 110°C/W AD7862-10 . ± 17 V Lead Temperature, Soldering AD7862-3 . ± 7 V Vapor Phase (60 sec) . +215°C AD7862-2 . +7 V Infrared (15 sec) . +220°C Reference Input Voltage to AGND . –0.3 V to V SSOP Package, Power Dissipation . 450 mW DD + 0.3 V Digital Input Voltage to DGND . –0.3 V to V θ DD + 0.3 V JA Thermal Impedance . 110°C/W Digital Output Voltage to DGND . –0.3 V to V Lead Temperature, Soldering DD + 0.3 V Operating Temperature Range Vapor Phase (60 sec) . +215°C Commercial (A, B Version) . –40°C to +85°C Infrared (15 sec) . +220°C Extended (S Version) . –55°C to +125°C *Stresses above those listed under “Absolute Maximum Ratings” may cause Storage Temperature Range . –65°C to +150°C permanent damage to the device. This is a stress rating only and functional Junction Temperature . +150°C operation of the device at these or any other conditions above those listed in the Plastic DIP Package, Power Dissipation . 670 mW operational sections of this specification is not implied. Exposure to absolute θ maximum rating conditions for extended periods may affect device reliability. JA Thermal Impedance . 116°C/W
ORDERING GUIDE Input Relative Temperature Package Package Model Input Accuracy Range Description Option
AD7862AR-10 ±10 V ±1 LSB –40°C to +85°C 28-Bit Small Outline Package R-28 AD7862BR-10 ±10 V ±1 LSB –40°C to +85°C 28-Bit Small Outline Package R-28 AD7862ARS-10 ±10 V ±1 LSB –40°C to +85°C 28-Bit Shrink Small Outline Package RS-28 AD7862AN-10 ±10 V ±1 LSB –40°C to +85°C 28-Bit Plastic DIP N-28 AD7862SQ-10 ±10 V ±1 LSB –55°C to +125°C 28-Bit Cerdip Q-28 AD7862AR-3 ±2.5 V ±1 LSB –40°C to +85°C 28-Bit Small Outline Package R-28 AD7862BR-3 ±2.5 V ±1 LSB –40°C to +85°C 28-Bit Small Outline Package R-28 AD7862ARS-3 ±2.5 V ±1 LSB –40°C to +85°C 28-Bit Shrink Small Outline Package RS-28 AD7862AN-3 ±2.5 V ±1 LSB –40°C to +85°C 28-Plastic DIP N-28 AD7862AR-2 0 V to 2.5 V ±1 LSB –40°C to +85°C 28-Bit Small Outline Package R-28 AD7862ARS-2 0 V to 2.5 V ±1 LSB –40°C to +85°C 28-Bit Shrink Small Outline Package RS-28 REV. 0 –3–
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