Datasheet OP400 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | Low Offset, Low Power Quad Op Amp |
| Pages / Page | 16 / 4 — OP400. Data Sheet. Table 2. Parameter. Symbol. Conditions. Min. Typ. Max. … |
| Revision | I |
| File Format / Size | PDF / 342 Kb |
| Document Language | English |
OP400. Data Sheet. Table 2. Parameter. Symbol. Conditions. Min. Typ. Max. Unit. Table 3. OP400E. OP400F. OP400G/H. Parameter. Symbol Conditions
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Text Version of Document
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OP400 Data Sheet
@ VS = ±15 V, −55°C ≤ TA ≤ +125°C for OP400A, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Input Offset Voltage VOS 70 270 µV Average Input Offset Voltage Drift TCVOS 0.3 1.2 µV/°C Input Offset Current IOS VCM = 0 V 0.1 2.5 nA Input Bias Current IB VCM = 0 V 1.3 5.0 nA Large Signal Voltage Gain AVO VO = ±10 V, RL = 10 kΩ 3000 9000 V/mV RL = 2 kΩ 1000 2300 Input Voltage Range1 IVR ±12 ±12.5 V Common-Mode Rejection CMR VCM = ±12 V 115 130 dB OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 10 kΩ ±12 ±12.4 POWER SUPPLY Power Supply Rejection Ratio PSRR VO = 3 V to 18 V 0.2 3.2 µV/V Supply Current per Amplifier ISY No load 600 775 µA DYNAMIC PERFORMANCE Capacitive Load Stability AV = 1, no oscillations 8 nF 1 Guaranteed by CMR test. @ VS = ±15 V, −25°C ≤ TA ≤ +85°C for OP400E/F, 0°C ≤ TA ≤ 70°C for OP400G, −40°C ≤ TA ≤ +85°C for OP400H, unless otherwise noted.
Table 3. OP400E OP400F OP400G/H Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit
INPUT CHARACTERISTICS Input Offset Voltage VOS 60 220 80 350 110 400 µV Average Input Offset TCVOS 0.3 1.2 0.3 2.0 0.6 2.5 µV/°C Voltage Drift Input Offset Current IOS VCM = 0 V E, F, G grades 0.1 2.5 0.1 3.5 0.2 6.0 nA H grade 0.2 12.0 nA Input Bias Current IB VCM = 0 V E, F, G grades 0.9 5.0 0.9 10.0 1.0 12.0 nA H grade 1.0 20.0 nA Large-Signal Voltage Gain AVO VCM = 0 V RL = 10 kΩ 3000 10,000 2000 5000 2000 5000 V/mV RL = 2 kΩ 1500 2700 1000 2000 1000 2000 V/mV Input Voltage Range1 IVR ±12 ±12.5 ±12 ±12.5 ±12 ±12.5 V Common-Mode Rejection CMR VCM = ±12 V 115 135 110 135 105 130 dB OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 10 kΩ ±12 ±12.4 ±12 ±12.4 ±12 ±12.6 V RL = 2 kΩ ±11 ±12 ±11 ±12 ±11 ±12.2 V POWER SUPPLY Power Supply Rejection PSRR VS = ±3 V to 0.15 3.2 0.15 5.6 0.3 10.0 µV/V Ratio ±18 V Supply Current per ISY No load 600 775 600 775 600 775 µA Amplifier DYNAMIC PERFORMANCE Capacitive Load Stability No oscil ations 10 10 10 nF 1 Guaranteed by CMR test. Rev. H | Page 4 of 16 Document Outline Features General Description Revision History Specifications Electrical Characteristics Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Applications Dual Low Power Instrumentation Amplifier Bipolar Current Transmitter Differential Output Instrumentation Amplifier Multiple Output Tracking Voltage Reference Outline Dimensions Ordering Guide SMD Parts and Equivalents
OP400 Data Sheet
@ VS = ±15 V, −55°C ≤ TA ≤ +125°C for OP400A, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Input Offset Voltage VOS 70 270 µV Average Input Offset Voltage Drift TCVOS 0.3 1.2 µV/°C Input Offset Current IOS VCM = 0 V 0.1 2.5 nA Input Bias Current IB VCM = 0 V 1.3 5.0 nA Large Signal Voltage Gain AVO VO = ±10 V, RL = 10 kΩ 3000 9000 V/mV RL = 2 kΩ 1000 2300 Input Voltage Range1 IVR ±12 ±12.5 V Common-Mode Rejection CMR VCM = ±12 V 115 130 dB OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 10 kΩ ±12 ±12.4 POWER SUPPLY Power Supply Rejection Ratio PSRR VO = 3 V to 18 V 0.2 3.2 µV/V Supply Current per Amplifier ISY No load 600 775 µA DYNAMIC PERFORMANCE Capacitive Load Stability AV = 1, no oscillations 8 nF 1 Guaranteed by CMR test. @ VS = ±15 V, −25°C ≤ TA ≤ +85°C for OP400E/F, 0°C ≤ TA ≤ 70°C for OP400G, −40°C ≤ TA ≤ +85°C for OP400H, unless otherwise noted.
Table 3. OP400E OP400F OP400G/H Parameter Symbol Conditions Min Typ Max Min Typ Max Min Typ Max Unit
INPUT CHARACTERISTICS Input Offset Voltage VOS 60 220 80 350 110 400 µV Average Input Offset TCVOS 0.3 1.2 0.3 2.0 0.6 2.5 µV/°C Voltage Drift Input Offset Current IOS VCM = 0 V E, F, G grades 0.1 2.5 0.1 3.5 0.2 6.0 nA H grade 0.2 12.0 nA Input Bias Current IB VCM = 0 V E, F, G grades 0.9 5.0 0.9 10.0 1.0 12.0 nA H grade 1.0 20.0 nA Large-Signal Voltage Gain AVO VCM = 0 V RL = 10 kΩ 3000 10,000 2000 5000 2000 5000 V/mV RL = 2 kΩ 1500 2700 1000 2000 1000 2000 V/mV Input Voltage Range1 IVR ±12 ±12.5 ±12 ±12.5 ±12 ±12.5 V Common-Mode Rejection CMR VCM = ±12 V 115 135 110 135 105 130 dB OUTPUT CHARACTERISTICS Output Voltage Swing VO RL = 10 kΩ ±12 ±12.4 ±12 ±12.4 ±12 ±12.6 V RL = 2 kΩ ±11 ±12 ±11 ±12 ±11 ±12.2 V POWER SUPPLY Power Supply Rejection PSRR VS = ±3 V to 0.15 3.2 0.15 5.6 0.3 10.0 µV/V Ratio ±18 V Supply Current per ISY No load 600 775 600 775 600 775 µA Amplifier DYNAMIC PERFORMANCE Capacitive Load Stability No oscil ations 10 10 10 nF 1 Guaranteed by CMR test. Rev. H | Page 4 of 16 Document Outline Features General Description Revision History Specifications Electrical Characteristics Absolute Maximum Ratings Thermal Resistance ESD Caution Typical Performance Characteristics Applications Dual Low Power Instrumentation Amplifier Bipolar Current Transmitter Differential Output Instrumentation Amplifier Multiple Output Tracking Voltage Reference Outline Dimensions Ordering Guide SMD Parts and Equivalents
