Datasheet AD8028-KGD-CHIP (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Low Distortion, High Speed Rail-to-Rail Input/Output Amplifier |
| Pages / Page | 8 / 3 — Known Good Die. AD8028-KGD-CHIP. SPECIFICATIONS. Table 1. Parameter. Test … |
| Revision | B |
| File Format / Size | PDF / 182 Kb |
| Document Language | English |
Known Good Die. AD8028-KGD-CHIP. SPECIFICATIONS. Table 1. Parameter. Test Conditions/Comments. Min. Typ. Max. Status1. Unit
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Known Good Die AD8028-KGD-CHIP SPECIFICATIONS
VS = ±5 V at TA = 25°C, RL = 1 kΩ to midsupply, G = 1, unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE –3 dB Bandwidth G = 1, VOUT = 0.2 V p-p 138 190 GBD MHz G = 1, VOUT = 2 V p-p 20 32 GBD MHz Bandwidth for 0.1 dB Flatness G = 2, VOUT = 0.2 V p-p 16 MHz Slew Rate G = +1, VOUT = 2 V step/G = −1, VOUT = 2 V step 90/100 V/µs Settling Time to 0.1% G = 2, VOUT = 2 V step 35 ns NOISE/DISTORTION PERFORMANCE Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 120 dBc fC = 5 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 80 dBc Input Voltage Noise f = 100 kHz 4.3 nV/√Hz Input Current Noise f = 100 kHz 1.6 pA/√Hz Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.1 % Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.2 Degrees Crosstalk, Output to Output G = 1, RL = 100 Ω, VOUT = 2 V p-p, VS = ±5 V @ 1 MHz −93 dB DC PERFORMANCE Input Offset Voltage SELECT = three-state or open, PNP active 200 µV SELECT = high NPN active 240 µV Input Offset Voltage Drift TMIN to TMAX 1.50 µV/°C Input Bias Current VCM = 0 V, NPN active 4 6 Tested µA TMIN to TMAX 4 µA VCM = 0 V, PNP active −8 −11 Tested µA TMIN to TMAX −8 µA Input Offset Current ±0.1 ±0.9 Tested µA Open-Loop Gain VOUT = ±2.5 V 110 dB INPUT CHARACTERISTICS Input Impedance 6 MΩ Input Capacitance 2 pF Input Common-Mode Voltage Range −5.2 to 5.2 V Common-Mode Rejection Ratio VCM = ±2.5 V 110 dB SELECT PIN Crossover Low, Selection Input Voltage Three-state < ±20 µA −3.3 to +5 V Crossover High, Selection Input Voltage −3.9 to −3.3 V Disable Input Voltage −5 to −3.9 V Disable Switching Speed 50% of input to <10% of final VOUT 980 ns Enable Switching Speed 45 ns OUTPUT CHARACTERISTICS Output Overdrive Recovery Time VIN = +6 V to −6 V, G = −1 40/45 ns (Rising/Falling Edge) Output Voltage Swing −VS + 0.20 +VS − 0.06, +VS Tested V −Vs + 0.06 Short-Circuit Output Sinking and Sourcing 120 mA Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = low −49 dB Capacitive Load Drive 30% overshoot 20 pF POWER SUPPLY Operating Range 2.7 12 V Quiescent Current/Amplifier 6.5 8.5 Tested mA Quiescent Current (Disabled) SELECT = low +VS 0.8 3 Tested mA −VS −0.9 −0.6 Tested mA Power Supply Rejection Ratio VS ± 1 V 110 dB 1 GBD is guaranteed by design. Rev. B | Page 3 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
Known Good Die AD8028-KGD-CHIP SPECIFICATIONS
VS = ±5 V at TA = 25°C, RL = 1 kΩ to midsupply, G = 1, unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE –3 dB Bandwidth G = 1, VOUT = 0.2 V p-p 138 190 GBD MHz G = 1, VOUT = 2 V p-p 20 32 GBD MHz Bandwidth for 0.1 dB Flatness G = 2, VOUT = 0.2 V p-p 16 MHz Slew Rate G = +1, VOUT = 2 V step/G = −1, VOUT = 2 V step 90/100 V/µs Settling Time to 0.1% G = 2, VOUT = 2 V step 35 ns NOISE/DISTORTION PERFORMANCE Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 120 dBc fC = 5 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 80 dBc Input Voltage Noise f = 100 kHz 4.3 nV/√Hz Input Current Noise f = 100 kHz 1.6 pA/√Hz Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.1 % Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.2 Degrees Crosstalk, Output to Output G = 1, RL = 100 Ω, VOUT = 2 V p-p, VS = ±5 V @ 1 MHz −93 dB DC PERFORMANCE Input Offset Voltage SELECT = three-state or open, PNP active 200 µV SELECT = high NPN active 240 µV Input Offset Voltage Drift TMIN to TMAX 1.50 µV/°C Input Bias Current VCM = 0 V, NPN active 4 6 Tested µA TMIN to TMAX 4 µA VCM = 0 V, PNP active −8 −11 Tested µA TMIN to TMAX −8 µA Input Offset Current ±0.1 ±0.9 Tested µA Open-Loop Gain VOUT = ±2.5 V 110 dB INPUT CHARACTERISTICS Input Impedance 6 MΩ Input Capacitance 2 pF Input Common-Mode Voltage Range −5.2 to 5.2 V Common-Mode Rejection Ratio VCM = ±2.5 V 110 dB SELECT PIN Crossover Low, Selection Input Voltage Three-state < ±20 µA −3.3 to +5 V Crossover High, Selection Input Voltage −3.9 to −3.3 V Disable Input Voltage −5 to −3.9 V Disable Switching Speed 50% of input to <10% of final VOUT 980 ns Enable Switching Speed 45 ns OUTPUT CHARACTERISTICS Output Overdrive Recovery Time VIN = +6 V to −6 V, G = −1 40/45 ns (Rising/Falling Edge) Output Voltage Swing −VS + 0.20 +VS − 0.06, +VS Tested V −Vs + 0.06 Short-Circuit Output Sinking and Sourcing 120 mA Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = low −49 dB Capacitive Load Drive 30% overshoot 20 pF POWER SUPPLY Operating Range 2.7 12 V Quiescent Current/Amplifier 6.5 8.5 Tested mA Quiescent Current (Disabled) SELECT = low +VS 0.8 3 Tested mA −VS −0.9 −0.6 Tested mA Power Supply Rejection Ratio VS ± 1 V 110 dB 1 GBD is guaranteed by design. Rev. B | Page 3 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
