Datasheet AD8028-KGD-CHIP (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | Low Distortion, High Speed Rail-to-Rail Input/Output Amplifier |
| Pages / Page | 8 / 4 — AD8028-KGD-CHIP. Known Good Die. Table 2. Parameter. Test … |
| Revision | B |
| File Format / Size | PDF / 182 Kb |
| Document Language | English |
AD8028-KGD-CHIP. Known Good Die. Table 2. Parameter. Test Conditions/Comments. Min. Typ. Max. Status1. Unit
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AD8028-KGD-CHIP Known Good Die
VS = 5 V at TA = 25°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 2. Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = 1, VOUT = 0.2 V p-p 131 185 GBD MHz G = 1, VOUT = 2 V p-p 18 28 GBD MHz Bandwidth for 0.1 dB Flatness G = 2, VOUT = 0.2 V p-p 12 MHz Slew Rate G = +1, VOUT = 2 V step/G = −1, VOUT = 2 V 85/100 V/µs step Settling Time to 0.1% G = 2, VOUT = 2 V step 40 ns NOISE/DISTORTION PERFORMANCE Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 90 dBc fC = 5 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 64 dBc Input Voltage Noise f = 100 kHz 4.3 nV/√Hz Input Current Noise f = 100 kHz 1.6 pA/√Hz Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.1 % Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.2 Degrees Crosstalk, Output to Output G = 1, RL = 100 Ω, VOUT = 2 V p-p, −92 dB VS = ±5 V @ 1 MHz DC PERFORMANCE Input Offset Voltage SELECT = three-state or open, PNP 200 800 Tested µV active SELECT = high NPN active 240 900 Tested µV Input Offset Voltage Drift TMIN to TMAX 2 µV/°C Input Bias Current VCM = 2.5 V, NPN active 4 µA TMIN to TMAX 4 µA VCM = 2.5 V, PNP active −8 µA TMIN to TMAX −8 µA Input Offset Current ±0.1 µA Open-Loop Gain VOUT = 1 V to 4 V 105 dB INPUT CHARACTERISTICS Input Impedance 6 MΩ Input Capacitance 2 pF Input Common-Mode Voltage Range −0.2 to +5.2 V Common-Mode Rejection Ratio VCM = 0 V to 2.5 V 105 dB SELECT PIN Crossover Low, Selection Input Voltage Three-state < ±20 µA 1.7 to 5 V Crossover High, Selection Input Voltage 1.1 to 1.7 V Disable Input Voltage 0 to 1.1 V Disable Switching Speed 50% of input to <10% of final VOUT 1100 ns Enable Switching Speed 50 ns OUTPUT CHARACTERISTICS Overdrive Recovery Time VIN = −1 V to +6 V, G = −1 50/50 ns (Rising/Falling Edge) Output Voltage Swing RL = 1 kΩ −Vs + 0.12 +VS − 0.04, +Vs Tested V −Vs + 0.04 Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = low −49 dB Short-Circuit Current Sinking and sourcing 105 mA Capacitive Load Drive 30% overshoot 20 pF POWER SUPPLY Operating Range 2.7 12 GBD V Quiescent Current/Amplifier 6 mA Quiescent Current (Disabled) SELECT = low 320 µA Power Supply Rejection Ratio VS ± 1 V 105 dB 1 GBD is guaranteed by design. Rev. B | Page 4 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
AD8028-KGD-CHIP Known Good Die
VS = 5 V at TA = 25°C, RL = 1 kΩ to midsupply, unless otherwise noted.
Table 2. Parameter Test Conditions/Comments Min Typ Max Status1 Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = 1, VOUT = 0.2 V p-p 131 185 GBD MHz G = 1, VOUT = 2 V p-p 18 28 GBD MHz Bandwidth for 0.1 dB Flatness G = 2, VOUT = 0.2 V p-p 12 MHz Slew Rate G = +1, VOUT = 2 V step/G = −1, VOUT = 2 V 85/100 V/µs step Settling Time to 0.1% G = 2, VOUT = 2 V step 40 ns NOISE/DISTORTION PERFORMANCE Spurious-Free Dynamic Range (SFDR) fC = 1 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 90 dBc fC = 5 MHz, VOUT = 2 V p-p, RF = 24.9 Ω 64 dBc Input Voltage Noise f = 100 kHz 4.3 nV/√Hz Input Current Noise f = 100 kHz 1.6 pA/√Hz Differential Gain Error NTSC, G = 2, RL = 150 Ω 0.1 % Differential Phase Error NTSC, G = 2, RL = 150 Ω 0.2 Degrees Crosstalk, Output to Output G = 1, RL = 100 Ω, VOUT = 2 V p-p, −92 dB VS = ±5 V @ 1 MHz DC PERFORMANCE Input Offset Voltage SELECT = three-state or open, PNP 200 800 Tested µV active SELECT = high NPN active 240 900 Tested µV Input Offset Voltage Drift TMIN to TMAX 2 µV/°C Input Bias Current VCM = 2.5 V, NPN active 4 µA TMIN to TMAX 4 µA VCM = 2.5 V, PNP active −8 µA TMIN to TMAX −8 µA Input Offset Current ±0.1 µA Open-Loop Gain VOUT = 1 V to 4 V 105 dB INPUT CHARACTERISTICS Input Impedance 6 MΩ Input Capacitance 2 pF Input Common-Mode Voltage Range −0.2 to +5.2 V Common-Mode Rejection Ratio VCM = 0 V to 2.5 V 105 dB SELECT PIN Crossover Low, Selection Input Voltage Three-state < ±20 µA 1.7 to 5 V Crossover High, Selection Input Voltage 1.1 to 1.7 V Disable Input Voltage 0 to 1.1 V Disable Switching Speed 50% of input to <10% of final VOUT 1100 ns Enable Switching Speed 50 ns OUTPUT CHARACTERISTICS Overdrive Recovery Time VIN = −1 V to +6 V, G = −1 50/50 ns (Rising/Falling Edge) Output Voltage Swing RL = 1 kΩ −Vs + 0.12 +VS − 0.04, +Vs Tested V −Vs + 0.04 Off Isolation VIN = 0.2 V p-p, f = 1 MHz, SELECT = low −49 dB Short-Circuit Current Sinking and sourcing 105 mA Capacitive Load Drive 30% overshoot 20 pF POWER SUPPLY Operating Range 2.7 12 GBD V Quiescent Current/Amplifier 6 mA Quiescent Current (Disabled) SELECT = low 320 µA Power Supply Rejection Ratio VS ± 1 V 105 dB 1 GBD is guaranteed by design. Rev. B | Page 4 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide
