Datasheet VLMU35CM..-280-120 (Vishay) - 3

ManufacturerVishay
DescriptionUVC Emitting Diode in SMD Package
Pages / Page7 / 3 — VLMU35CM..-280-120. TYPICAL CHARACTERISTICS
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Document LanguageEnglish

VLMU35CM..-280-120. TYPICAL CHARACTERISTICS

VLMU35CM..-280-120 TYPICAL CHARACTERISTICS

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VLMU35CM..-280-120
www.vishay.com Vishay Semiconductors
TYPICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 200 10000 1.0 10000 R = 15 K/W thJS 0.9 ) 0.8 A 150 (m Power 0.7 1000 1000 0.6 rrent u ne ne ne ine ne 100 0.5 ine Spectral rd C 1st li e 2nd l 2nd li 1st li a tiv 0.4 2nd li 100 2nd l la orw 100 e 0.3 F R - 50 - l I F 0.2 I re 0.1 0 10 0 10 0 20 40 60 80 100 250 270 290 310 330 350 T - Solder Point Temperature (°C) λ S - Wavelengths (nm) 2nd line 2nd line Fig. 1 - Maximum Forward Current vs. Solder Point Temperature Fig. 4 - Relative Spectral Power vs. Wavelength Axis Title Axis Tit 0° le 10° 20° 30° 1.6 10000 1.4 ty θ 1.2 tensi 0° Power ent n 40° 1000 ant 1.0 θ di ant I 90° a ne ne ine di 1.0 ine a ne 0.8 e R 50° iv 1st li e R 2nd li 2nd l v 0.9 2nd l at 2nd li 0.6 el ati 100 60° R el ngular Displacem - R 0.8 A l 0.4 - e - l 70° ϕ Φ e r 0.2 I V re 80° 0 10 0 20 40 60 80 100 120 140 160 0.6 0.4 0.2 0 I - Forward Current (mA) F 1st line 2nd line 2nd line Fig. 2 - Relative Radiant Power vs. Forward Current Fig. 5 - Relative Radiant Intensity vs. Angular Displacement Axis Title Axis Title 180 10000 1.2 10000 160 1.0 ) ux 140 A (m 120 1000 ant Fl 0.8 1000 di a rrent 100 u ne ne ine ne ine ne e R 0.6 v 80 rd C 1st li 2nd li 2nd l 2nd l ati 1st li a 2nd li el 60 100 R orw 0.4 100 - F l - e 40 I F Φ e r 0.2 20 0 10 0 10 3 4 5 6 0 20 40 60 80 100 V - Forward Voltage (V) T - Ambient Temperature (°C) F amb 2nd line 2nd line Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Flux vs. Ambient Temperature Rev. 1.0, 29-Nov-2018
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