Datasheet SUP90P06-09L (Vishay)
| Manufacturer | Vishay |
| Description | P-Channel 60 V (D-S) 175 °C MOSFET |
| Pages / Page | 7 / 1 — SUP90P06-09L. P-Channel 60 V (D-S) 175 °C MOSFET. FEATURES. PRODUCT … |
| Revision | B |
| File Format / Size | PDF / 106 Kb |
| Document Language | English |
SUP90P06-09L. P-Channel 60 V (D-S) 175 °C MOSFET. FEATURES. PRODUCT SUMMARY. VDS (V). RDS(on) (. ID (A)c. RoHS. COMPLIANT. APPLICATIONS
Model Line for this Datasheet
Text Version of Document
SUP90P06-09L
Vishay Siliconix
P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY
• TrenchFET® Power MOSFET
VDS (V) RDS(on) ( ) ID (A)c
• Compliant to RoHS Directive 2002/95/EC 0.0093 at V
RoHS
GS = - 10 V - 90 - 60
COMPLIANT
0.0118 at VGS = - 4.5 V - 90
APPLICATIONS
• DC/DC Primary Switch
TO-220AB
S G Drain connected to Tab G D S Top View D
Ordering Information:
SUP90P06-09L-E3 (Lead (Pb)-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 90 Continuous Drain Current (T I J = 175 °C)c D TC = 125 °C - 67 A Pulsed Drain Current IDM - 200 Avalanche Current IAS - 65 L = 0.1 mH Single Pulse Avalanche Energya EAS 211 mJ TC = 25 °C 250b Power Dissipation PD W TA = 25 °C 2.4 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit
Junction-to-Ambient Free Air RthJA 62 °C/W Junction-to-Case RthJC 0.6 Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. Limited by package. Document Number: 73010 www.vishay.com S10-2545-Rev. B, 08-Nov-10 1
Vishay Siliconix
P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY
• TrenchFET® Power MOSFET
VDS (V) RDS(on) ( ) ID (A)c
• Compliant to RoHS Directive 2002/95/EC 0.0093 at V
RoHS
GS = - 10 V - 90 - 60
COMPLIANT
0.0118 at VGS = - 4.5 V - 90
APPLICATIONS
• DC/DC Primary Switch
TO-220AB
S G Drain connected to Tab G D S Top View D
Ordering Information:
SUP90P06-09L-E3 (Lead (Pb)-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 TC = 25 °C - 90 Continuous Drain Current (T I J = 175 °C)c D TC = 125 °C - 67 A Pulsed Drain Current IDM - 200 Avalanche Current IAS - 65 L = 0.1 mH Single Pulse Avalanche Energya EAS 211 mJ TC = 25 °C 250b Power Dissipation PD W TA = 25 °C 2.4 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit
Junction-to-Ambient Free Air RthJA 62 °C/W Junction-to-Case RthJC 0.6 Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. Limited by package. Document Number: 73010 www.vishay.com S10-2545-Rev. B, 08-Nov-10 1
