Datasheet SUP90P06-09L (Vishay) - 3
| Manufacturer | Vishay |
| Description | P-Channel 60 V (D-S) 175 °C MOSFET |
| Pages / Page | 7 / 3 — SUP90P06-09L. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Revision | B |
| File Format / Size | PDF / 106 Kb |
| Document Language | English |
SUP90P06-09L. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. Transconductance
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Text Version of Document
SUP90P06-09L
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 200 200 5 V V 160 GS = 10 V thru 6 V 160 A( A t ( n t e 120 n r e 120 r r u r u C 4 V C n i n a i r a 80 r D 80 D -) -) I D I D T C = 125 °C 40 40 2 V 25 °C 3 V - 55 °C 0 0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
200 0.020 TC = - 55 °C 160 25 °C ) 0.016 S ( Ω e c e n c a n t a c 120 125 °C t u s 0.012 i d s n e V o R GS = 4.5 V c - s n n VGS = 10 V a O 80 r -( 0.008 T - ) sfg DS(on)R 40 0.004 0 0.000 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 I D - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current
15 000 20 V DS = 30 V 12 000 V( 16 I e D = 90 A ) g F a p tl ( Ciss o e V c 9000 n e 12 a c t r i u c o a p S- a ot C 6000 - 8 - eta C G -) 3000 GS 4 V Coss C rss 0 0 0 10 20 30 40 50 60 0 40 80 120 160 200 240 280 320 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Capacitance Gate Charge
Document Number: 73010 www.vishay.com S10-2545-Rev. B, 08-Nov-10 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 200 200 5 V V 160 GS = 10 V thru 6 V 160 A( A t ( n t e 120 n r e 120 r r u r u C 4 V C n i n a i r a 80 r D 80 D -) -) I D I D T C = 125 °C 40 40 2 V 25 °C 3 V - 55 °C 0 0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
200 0.020 TC = - 55 °C 160 25 °C ) 0.016 S ( Ω e c e n c a n t a c 120 125 °C t u s 0.012 i d s n e V o R GS = 4.5 V c - s n n VGS = 10 V a O 80 r -( 0.008 T - ) sfg DS(on)R 40 0.004 0 0.000 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 I D - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current
15 000 20 V DS = 30 V 12 000 V( 16 I e D = 90 A ) g F a p tl ( Ciss o e V c 9000 n e 12 a c t r i u c o a p S- a ot C 6000 - 8 - eta C G -) 3000 GS 4 V Coss C rss 0 0 0 10 20 30 40 50 60 0 40 80 120 160 200 240 280 320 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Capacitance Gate Charge
Document Number: 73010 www.vishay.com S10-2545-Rev. B, 08-Nov-10 3
