Datasheet RH1078M (Analog Devices) - 4

ManufacturerAnalog Devices
DescriptionMicropower, Dual, Single Supply Precision Op Amp
Pages / Page8 / 4 — TABLE 1A: ELECTRICAL CHARACTERISTICS. (Postirradiation)
RevisionG
File Format / SizePDF / 161 Kb
Document LanguageEnglish

TABLE 1A: ELECTRICAL CHARACTERISTICS. (Postirradiation)

TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation)

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RH1078M
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation) VS = 5V, 0V, VCM = 0.1V, VOUT = 1.4V, TA = 25°C, unless otherwise specified. 10KRAD(Si) 25KRAD(Si) 50KRAD(Si) 75KRAD(Si) 100KRAD(Si) SYMBOL PARAMETER CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
VOS Input Offset Voltage 120 175 250 500 µV IOS Input Offset Current 2 8 13 18 nA IB Input Bias Current 20 40 80 100 nA Input Voltage Range 3.5 3.5 3.5 3.5 V CMRR Common Mode VCM = 0V to 3.5V 91 89 87 85 dB Rejection Ratio PSRR Power Supply VS = 2.3V to 12V 100 100 98 88 dB Rejection Ratio AVOL Large-Signal Voltage VO = 0.03V to 4V, No Load 150 150 100 50 V/mV Gain VO = 0.03V to 3.5V, RL = 50k 120 50 20 10 V/mV VOUT Output Voltage Swing Output Low, No Load 6 9 13 20 mV Output Low, 2k to GND 2 2 2 2 mV Output Low, ISINK = 100µA 130 140 150 160 mV Output High, No Load 4.2 4.2 4.2 4.2 V Output High, 2k to GND 3.5 3.5 3.5 3.5 V SR Slew Rate AV = 1, VS = ±2.5V 0.04 0.03 0.02 0.01 V/µs IS Supply Current per Amplifier 75 75 75 75 µA Rev. G 4 For more information www.analog.com Document Outline Description Package/Order Information Burn-In Circuit Total Dose Bias Circuit Absolute Maximum Ratings Table 1: Electrical Characteristics Table 1A: Electrical Characteristics Table 2: Electrical Test Requirements Typical Applications Revision History