Datasheet BC847BPN (Nexperia) - 6
| Manufacturer | Nexperia |
| Description | NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. |
| Pages / Page | 14 / 6 — Nexperia. BC847BPN. 45 V, 100 mA NPN/PNP general-purpose transistor. Fig … |
| Revision | 07082018 |
| File Format / Size | PDF / 589 Kb |
| Document Language | English |
Nexperia. BC847BPN. 45 V, 100 mA NPN/PNP general-purpose transistor. Fig 4. TR1 (NPN): DC current gain as a function of. Fig 5
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Nexperia BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor
mgt727 006aab422 600 0.20 IB (mA) = 4.0 h 3.6 FE IC 3.2 2.8 500 (1) (A) 2.4 2.0 0.15 1.6 400 1.2 (2) 0.8 300 0.10 0.4 200 0.05 (3) 100 0 0 10−1 1 10 102 103 0 1 2 3 4 5 IC (mA) VCE (V) VCE = 5 V Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 4. TR1 (NPN): DC current gain as a function of Fig 5. TR1 (NPN): Collector current as a function of collector current; typical values collector-emitter voltage; typical values
mgt728 006aab423 1200 1.2 VBE VBEsat (mV) (V) 1000 1.0 (1) (1) 800 0.8 (2) (2) 600 0.6 (3) (3) 400 0.4 200 0 0.2 10−2 10−1 1 10 102 103 10−1 103 102 1 10 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C
Fig 6. TR1 (NPN): Base-emitter voltage as a function Fig 7. TR1 (NPN): Base-emitter saturation voltage as of collector current; typical values a function of collector current; typical values
BC847BPN_4 © NNexperia B.V. 2017. All rights reserved
Product data sheet Rev. 04 — 18 February 2009 6 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
mgt727 006aab422 600 0.20 IB (mA) = 4.0 h 3.6 FE IC 3.2 2.8 500 (1) (A) 2.4 2.0 0.15 1.6 400 1.2 (2) 0.8 300 0.10 0.4 200 0.05 (3) 100 0 0 10−1 1 10 102 103 0 1 2 3 4 5 IC (mA) VCE (V) VCE = 5 V Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 4. TR1 (NPN): DC current gain as a function of Fig 5. TR1 (NPN): Collector current as a function of collector current; typical values collector-emitter voltage; typical values
mgt728 006aab423 1200 1.2 VBE VBEsat (mV) (V) 1000 1.0 (1) (1) 800 0.8 (2) (2) 600 0.6 (3) (3) 400 0.4 200 0 0.2 10−2 10−1 1 10 102 103 10−1 103 102 1 10 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C
Fig 6. TR1 (NPN): Base-emitter voltage as a function Fig 7. TR1 (NPN): Base-emitter saturation voltage as of collector current; typical values a function of collector current; typical values
BC847BPN_4 © NNexperia B.V. 2017. All rights reserved
Product data sheet Rev. 04 — 18 February 2009 6 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
