Datasheet BSC034N06NS (Infineon) - 2
| Manufacturer | Infineon |
| Description | OptiMOS Power-Transistor |
| Pages / Page | 10 / 2 — BSC034N06NS. Maximum ratings,. Parameter. Symbol Conditions. Value. Unit. … |
| Revision | 02_00 |
| File Format / Size | PDF / 501 Kb |
| Document Language | English |
BSC034N06NS. Maximum ratings,. Parameter. Symbol Conditions. Value. Unit. Values. min. typ. max. Thermal characteristics
Model Line for this Datasheet
Text Version of Document
BSC034N06NS Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Power dissipation P tot T C=25 °C 74 W T A=25 °C, 2.5 R thJA=50 K/W2) Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics
Thermal resistance, junction - case R thJC bottom - - 1.7 K/W top - - 20 Device on PCB R thJA 6 cm2 cooling area2) - - 50
Electrical characteristics,
at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=41 µA 2.1 2.8 3.3 V DS=60 V, V GS=0 V, Zero gate voltage drain current I DSS - 0.1 1 µA T j=25 °C V DS=60 V, V GS=0 V, - 10 100 T j=125 °C Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 2.8 3.4 mW V GS=6 V, I D=12.5 A - 4.0 5.1 Gate resistance R G - 1.3 2.0 W |V DS|>2|I D|R DS(on)max, Transconductance g fs 46 93 - S I D=50 A Rev.2.0 page 2 2013-10-17
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Power dissipation P tot T C=25 °C 74 W T A=25 °C, 2.5 R thJA=50 K/W2) Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics
Thermal resistance, junction - case R thJC bottom - - 1.7 K/W top - - 20 Device on PCB R thJA 6 cm2 cooling area2) - - 50
Electrical characteristics,
at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=41 µA 2.1 2.8 3.3 V DS=60 V, V GS=0 V, Zero gate voltage drain current I DSS - 0.1 1 µA T j=25 °C V DS=60 V, V GS=0 V, - 10 100 T j=125 °C Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=50 A - 2.8 3.4 mW V GS=6 V, I D=12.5 A - 4.0 5.1 Gate resistance R G - 1.3 2.0 W |V DS|>2|I D|R DS(on)max, Transconductance g fs 46 93 - S I D=50 A Rev.2.0 page 2 2013-10-17
