Datasheet BSC034N06NS (Infineon) - 3
| Manufacturer | Infineon |
| Description | OptiMOS Power-Transistor |
| Pages / Page | 10 / 3 — BSC034N06NS. Parameter. Symbol Conditions. Values. Unit. min. typ. max. … |
| Revision | 02_00 |
| File Format / Size | PDF / 501 Kb |
| Document Language | English |
BSC034N06NS. Parameter. Symbol Conditions. Values. Unit. min. typ. max. Dynamic characteristics. Reverse Diode
Model Line for this Datasheet
Text Version of Document
BSC034N06NS Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics
Input capacitance C iss - 2400 3000 pF V Output capacitance C GS=0 V, V DS=30 V, oss - 560 700 f =1 MHz Reverse transfer capacitance Crss - 27 54 Turn-on delay time t d(on) - 9 - ns Rise time t V DD=30 V, V GS=10 V, r - 5 - I D=50 A, Turn-off delay time t d(off) - 19 - R G,ext,ext=1.6 W Fall time t f - 5 - Gate Charge Characteristics5) Gate to source charge Q gs - 11 - nC Gate charge at threshold Q g(th) - 6.7 - Gate to drain charge Q gd - 6.5 9.2 V DD=30 V, I D=50 A, V Switching charge Q GS=0 to 10 V sw - 11 - Gate charge total Q g - 33 41 Gate plateau voltage V plateau - 4.7 - V V DS=0.1 V, Gate charge total, sync. FET Q g(sync) - 29 - nC V GS=0 to 10 V Output charge Q oss V DD=30 V, V GS=0 V - 37 -
Reverse Diode
Diode continuous forward current I S - - 67 A T C=25 °C Diode pulse current I S,pulse - - 400 V GS=0 V, I F=50 A, Diode forward voltage V SD - 0.9 1.2 V T j=25 °C Reverse recovery time t rr - 49 78 ns V R=30 V, I F=50 A, di Reverse recovery charge Q F/dt =100 A/µs rr - 65 - nC 5) See figure 16 for gate charge parameter definition Rev.2.0 page 3 2013-10-17
Input capacitance C iss - 2400 3000 pF V Output capacitance C GS=0 V, V DS=30 V, oss - 560 700 f =1 MHz Reverse transfer capacitance Crss - 27 54 Turn-on delay time t d(on) - 9 - ns Rise time t V DD=30 V, V GS=10 V, r - 5 - I D=50 A, Turn-off delay time t d(off) - 19 - R G,ext,ext=1.6 W Fall time t f - 5 - Gate Charge Characteristics5) Gate to source charge Q gs - 11 - nC Gate charge at threshold Q g(th) - 6.7 - Gate to drain charge Q gd - 6.5 9.2 V DD=30 V, I D=50 A, V Switching charge Q GS=0 to 10 V sw - 11 - Gate charge total Q g - 33 41 Gate plateau voltage V plateau - 4.7 - V V DS=0.1 V, Gate charge total, sync. FET Q g(sync) - 29 - nC V GS=0 to 10 V Output charge Q oss V DD=30 V, V GS=0 V - 37 -
Reverse Diode
Diode continuous forward current I S - - 67 A T C=25 °C Diode pulse current I S,pulse - - 400 V GS=0 V, I F=50 A, Diode forward voltage V SD - 0.9 1.2 V T j=25 °C Reverse recovery time t rr - 49 78 ns V R=30 V, I F=50 A, di Reverse recovery charge Q F/dt =100 A/µs rr - 65 - nC 5) See figure 16 for gate charge parameter definition Rev.2.0 page 3 2013-10-17
