Datasheet IRLHM620PbF (Infineon) - 4

ManufacturerInfineon
DescriptionHEXFET Power MOSFET
Pages / Page9 / 4 — Fig 7. Fig 8. Fig 9. Fig 10. Fig 11
File Format / SizePDF / 542 Kb
Document LanguageEnglish

Fig 7. Fig 8. Fig 9. Fig 10. Fig 11

Fig 7 Fig 8 Fig 9 Fig 10 Fig 11

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  IRLHM620PbF 1000 1000 OPERATION IN THIS AREA ) A LIMITED BY R ( A DS(on) ( t t n n er e r 100 rr u u 100 100µsec C T C n J = 150°C i e 1msec a c r ru D o e S 10msec s - DC r o e T t- v J = 25°C 10 n e ia 10 R r , D D , I S I D Tc = 25°C V Tj = 150°C GS = 0V Single Pulse 1.0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area 100 1.6 90 ) Limited By Package 1.4 V( 80 eg ) a 1.2 t A 70 l ( o t V n e dl 1.0 r 60 r o u h C s 50 e n r 0.8 i h a t r 40 e D t a 0.6 I , G D = 50µA I D 30 , ) I h D = 250µA t( 0.4 I 20 S D = 1.0mA GV ID = 1.0A 10 0.2 0 0.0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature (°C) TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10.
Threshold Voltage Vs. Temperature 10 W/ C D = 0.50 ° 1 ) 0.20 CJht 0.10 Z ( 0.05 es 0.1 n 0.02 ops 0.01 e R l ma 0.01 reh SINGLE PULSE T Notes: ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 25, 2015