Datasheet MTD1N60E (Motorola) - 6
| Manufacturer | Motorola |
| Description | TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount. N−Channel Enhancement−Mode Silicon Gate |
| Pages / Page | 10 / 6 — SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. Figure 12. … |
| Revision | XXX |
| File Format / Size | PDF / 239 Kb |
| Document Language | English |
SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. Figure 12. Maximum Avalanche Energy versus. Safe Operating Area
Model Line for this Datasheet
Text Version of Document
MTD1N60E
SAFE OPERATING AREA
10 50 VGS = 20 V I SINGLE PULSE D = 1 A 10 µs TC = 25°C 40 1 O−SOURCE (mJ) (AMPS) 30 100 µs 0.1 1 ms dc 20 10 ms , DRAIN CURRENT 0.01 AVALANCHE ENERGY I D RDS(on) LIMIT 10 THERMAL LIMIT , SINGLE PULSE DRAINN−T PACKAGE LIMIT E AS 0.001 0 0.1 1 10 100 1000 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC THERMAL D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN 0.01 , NORMALIZED EFFECTIVE t1 READ TIME AT t1 r(t) SINGLE PULSE t2 TJ(pk) − TC = P(pk) RθJC(t) TRANSIENT DUTY CYCLE, D = t1/t2 0.011.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 t,TIME (s)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 14. Diode Reverse Recovery Waveform
6 Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
10 50 VGS = 20 V I SINGLE PULSE D = 1 A 10 µs TC = 25°C 40 1 O−SOURCE (mJ) (AMPS) 30 100 µs 0.1 1 ms dc 20 10 ms , DRAIN CURRENT 0.01 AVALANCHE ENERGY I D RDS(on) LIMIT 10 THERMAL LIMIT , SINGLE PULSE DRAINN−T PACKAGE LIMIT E AS 0.001 0 0.1 1 10 100 1000 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RθJC(t) = r(t) RθJC THERMAL D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN 0.01 , NORMALIZED EFFECTIVE t1 READ TIME AT t1 r(t) SINGLE PULSE t2 TJ(pk) − TC = P(pk) RθJC(t) TRANSIENT DUTY CYCLE, D = t1/t2 0.011.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 t,TIME (s)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 14. Diode Reverse Recovery Waveform
6 Motorola TMOS Power MOSFET Transistor Device Data
