Datasheet DMT47M2LDVQ (Diodes) - 2

DMT47M2LDVQ Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V T 30.2 Continuous Drain Current (Note 7), V C = +25C GS = 10V I A T D C = +100C 24.2 T 11.9 Continuous Drain Current (Note 6), V A = +25C GS = 10V I A T D A = +70C 9.5 Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 120 A Maximum Continuous Body Diode Forward Current (Note 7) IS 16.4 A Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) ISM 120 A Avalanche Current, L = 0.1mH (Note 8) IAS 22.1 A Avalanche Energy, L = 0.1mH (Note 8) EAS 24.4 mJ
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) TA = +25°C PD 2.34 W Thermal Resistance, Junction to Ambient (Note 6) RJA 53.7 °C/W Total Power Dissipation (Note 7) TC = +25°C PD 14.8 W Thermal Resistance, Junction to Case (Note 7) RJC 8.43 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage VGS(TH) 1.2 1.4 2.3 V VDS = VGS, ID = 250μA — 8.4 10.8 V Static Drain-Source On-Resistance GS = 10V, ID = 20A RDS(ON) mΩ — 10.9 15 VGS = 4.5V, ID = 10A Diode Forward Voltage VSD — 0.9 1.2 V VGS = 0V, IS = 20A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance Ciss — 891 — V Output Capacitance Coss — 490 — pF DS = 20V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Crss — 14.8 — Gate Resistance Rg — 1.87 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 10V) Qg — 14.0 — Total Gate Charge (VGS = 4.5V) Qg — 6.72 — nC VDS = 20V, ID = 20A Gate-Source Charge Qgs — 1.04 — Gate-Drain Charge Qgd — 2.52 — Turn-On Delay Time tD(ON) — 3.95 — Turn-On Rise Time tR — 5.41 — V ns DD = 20V, VGS = 10V, Turn-Off Delay Time tD(OFF) — 15.4 — RG = 3Ω, ID = 20A Turn-Off Fall Time tF — 8.53 — Body Diode Reverse Recovery Time tRR — 56.6 — ns IF = 20A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 40.0 — nC Notes: 6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMT47M2LDVQ 2 of 7 May 2019 Document number: DS41516 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated