Datasheet STDRIVE101 (STMicroelectronics) - 9
| Manufacturer | STMicroelectronics |
| Description | Triple half-bridge gate driver |
| Pages / Page | 32 / 9 — STDRIVE101. Electrical characteristics. Symbol. Parameter. Test … |
| File Format / Size | PDF / 899 Kb |
| Document Language | English |
STDRIVE101. Electrical characteristics. Symbol. Parameter. Test Condition. Min. Typ. Max. Unit. Thermal protection
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STDRIVE101 Electrical characteristics Symbol Parameter Test Condition Min. Typ. Max. Unit
V t DS monitoring protection DELAY,SC See Figure 6 200 ns delay time
Thermal protection
(6) T Thermal shutdown SD 150 165 °C temperature T Thermal shutdown SDhys 30 °C hystreresis 1. These timings are measured using INHx/INLx mode (refer to Figure 4). An extra time is added when the device works with ENx/INx mode (refer to Figure 2 and Figure 3) 2. MT = max. (|ton(GLS) - toff(GLS)|, |ton(GHS) - toff(GHS)|, |toff(GLS) - ton(GHS)|, |toff(GHS) - ton(GLS)|). 3. MTCH is the difference between the ton and toff of a channel and the same timings of any other channel. 4. MDT = | tDTHL - tDTLH | see Figure 2. 5. MDTCH is the difference between the t DTHL and t DTLH of a channel and the same timings of any other channel. 6. Based on characterization data on a limited number of samples, not tested during production
Figure 2. INx timings and deadtime (ENx/INx mode)
toff(1) toff(1) Note: (1) this propagation delay is typically 16 ns longer than the one measured in INH/INL driving mode (testing condition).
Figure 3. ENx timings (ENx/INx mode)
EN IN GHS tDT + ton(1) toff(1) GLS ton(1) toff(1) Note: (1) this propagation delay is typically 16 ns longer than the one measured in INH/INL driving mode (testing condition).
DS13472
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Rev 1 page 9/32
Document Outline Cover image Product status link / summary Features Application Description 1 Block diagram 2 Electrical data 2.1 Absolute maximum ratings 2.2 Recommended operating conditions 2.3 Thermal data 2.4 Electrical sensitivity characteristics 3 Electrical characteristics 4 Pin description 5 Device description 5.1 Gate drivers’ characteristics 5.2 12 V LDO linear regulator 5.2.1 Bootstrap section 5.2.1.1 Power-up and wake-up 5.2.1.2 Charging time and external bootstrap diodes 5.2.2 Externally provided gate driver’s supply voltage 5.3 Control logic 5.3.1 Deadtime 5.4 Standby mode 5.5 Undervoltage protection 5.6 VDS monitoring protection 5.7 Overcurrent comparator 5.8 Thermal protection 6 ESD protection strategy 7 Application example 8 Package information 9 Ordering information Revision history Contents List of tables List of figures
STDRIVE101 Electrical characteristics Symbol Parameter Test Condition Min. Typ. Max. Unit
V t DS monitoring protection DELAY,SC See Figure 6 200 ns delay time
Thermal protection
(6) T Thermal shutdown SD 150 165 °C temperature T Thermal shutdown SDhys 30 °C hystreresis 1. These timings are measured using INHx/INLx mode (refer to Figure 4). An extra time is added when the device works with ENx/INx mode (refer to Figure 2 and Figure 3) 2. MT = max. (|ton(GLS) - toff(GLS)|, |ton(GHS) - toff(GHS)|, |toff(GLS) - ton(GHS)|, |toff(GHS) - ton(GLS)|). 3. MTCH is the difference between the ton and toff of a channel and the same timings of any other channel. 4. MDT = | tDTHL - tDTLH | see Figure 2. 5. MDTCH is the difference between the t DTHL and t DTLH of a channel and the same timings of any other channel. 6. Based on characterization data on a limited number of samples, not tested during production
Figure 2. INx timings and deadtime (ENx/INx mode)
toff(1) toff(1) Note: (1) this propagation delay is typically 16 ns longer than the one measured in INH/INL driving mode (testing condition).
Figure 3. ENx timings (ENx/INx mode)
EN IN GHS tDT + ton(1) toff(1) GLS ton(1) toff(1) Note: (1) this propagation delay is typically 16 ns longer than the one measured in INH/INL driving mode (testing condition).
DS13472
-
Rev 1 page 9/32
Document Outline Cover image Product status link / summary Features Application Description 1 Block diagram 2 Electrical data 2.1 Absolute maximum ratings 2.2 Recommended operating conditions 2.3 Thermal data 2.4 Electrical sensitivity characteristics 3 Electrical characteristics 4 Pin description 5 Device description 5.1 Gate drivers’ characteristics 5.2 12 V LDO linear regulator 5.2.1 Bootstrap section 5.2.1.1 Power-up and wake-up 5.2.1.2 Charging time and external bootstrap diodes 5.2.2 Externally provided gate driver’s supply voltage 5.3 Control logic 5.3.1 Deadtime 5.4 Standby mode 5.5 Undervoltage protection 5.6 VDS monitoring protection 5.7 Overcurrent comparator 5.8 Thermal protection 6 ESD protection strategy 7 Application example 8 Package information 9 Ordering information Revision history Contents List of tables List of figures
