Datasheet TCKE712BNL (Toshiba) - 6
| Manufacturer | Toshiba |
| Description | 13.2 V, eFuse with Adjustable Over Current Protection |
| Pages / Page | 15 / 6 — TCKE712BNL DC Characteristics (Unless otherwise specified,Ta = -40 to 85 … |
| File Format / Size | PDF / 632 Kb |
| Document Language | English |
TCKE712BNL DC Characteristics (Unless otherwise specified,Ta = -40 to 85 °C, VIN = 12 V, RILIM = 3.6 k. Basic operation
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TCKE712BNL
TCKE712BNL DC Characteristics (Unless otherwise specified,Ta = -40 to 85 °C, VIN = 12 V, RILIM = 3.6 k
Ω
)
Ta = −40 to 85℃ Ta = 25℃ (Note 2) Characteristics Symbol Test Condition Unit Min. Typ. Max. Min. Max.
Basic operation
VIN under voltage lockout (UVLO) V threshold, rising IN_UVLO 4.15 4.00 4.4 V VIN under voltage lockout (UVLO) V hysteresis IN_UVhyst 0.2 V EN threshold voltage, rising VENR 1.1 1.2 V EN threshold voltage, falling VENF 0.95 0.85 V On resistance RON IOUT = 1 A, 53 80 mΩ Quiescent current (ON state) IQ VEN = 3 V, IOUT = 0 A 690 852 µA Quiescent current (OFF state) IQ(OFF) EN = 0 V 46 80 µA V Reverse blocking current I OUT = 5 V, VIN = 0 V, RB 0.001 1.0 µA VEN = 0 V EN pull down resistor REN EN = 1.1 V 20 10 55 MΩ dV/dT control dV/dT Voltage VdV/dT 3.1 2.8 3.4 V Charging Current IdV/dT VdV/dT = 0 V 5 3.5 6.5 µA dV/dT to OUT gain GAINdV/dT VdV/dT = 1V, IOUT = 1A 9.0 8.5 9.5 Over voltage protection OVP threshold, rising VOVPR 1.2 1.14 1.26 V OVP pull down resistor ROVP VOVP = 1.2 V 22 11 60 MΩ FLAG FLAG Output Low Voltage VFLAG_L ISINK_FLAG = 1 mA 0.1 V FLAG Output High leakage IFLAG_LEAK VFLAG = 18 V 1 µA Over current protection VIN = 5 V, RILIM = 1.7 kΩ, 3.65 3.14 4.14 A VIN - VOUT = 2 V VIN = 9 V, RILIM = 2.4 kΩ, 2.58 2.21 2.99 A VIN - VOUT = 2 V VIN = 12 V, RILIM = 3.1 kΩ, 2.00 1.71 2.35 A VIN - VOUT = 2 V Over current limit (Note3) IOUT_CL VIN = 12 V, RILIM = 3.6 kΩ, 1.72 1.47 2.04 A VIN - VOUT = 2 V VIN = 12 V, RILIM = 6.2 kΩ, 1.00 0.78 1.21 A VIN - VOUT = 2 V VIN = 12 V, RILIM = 12 kΩ, 0.51 0.35 0.64 A VIN - VOUT = 2 V I IOUT_CL Fast trip comparator level I OUT_CL FASTTRIP × 2.5 × A 2.0
Thermal Protection
Thermal shut down Threshold TSD Tj 134 °C Note2: This parameter is warranted by design. Note3: Pulsed testing techniques used during this test maintain junction temperature approximately equal to ambient temperature. © 2020 6 2020-12-14 Toshiba Electronic Devices & Storage Corporation
TCKE712BNL DC Characteristics (Unless otherwise specified,Ta = -40 to 85 °C, VIN = 12 V, RILIM = 3.6 k
Ω
)
Ta = −40 to 85℃ Ta = 25℃ (Note 2) Characteristics Symbol Test Condition Unit Min. Typ. Max. Min. Max.
Basic operation
VIN under voltage lockout (UVLO) V threshold, rising IN_UVLO 4.15 4.00 4.4 V VIN under voltage lockout (UVLO) V hysteresis IN_UVhyst 0.2 V EN threshold voltage, rising VENR 1.1 1.2 V EN threshold voltage, falling VENF 0.95 0.85 V On resistance RON IOUT = 1 A, 53 80 mΩ Quiescent current (ON state) IQ VEN = 3 V, IOUT = 0 A 690 852 µA Quiescent current (OFF state) IQ(OFF) EN = 0 V 46 80 µA V Reverse blocking current I OUT = 5 V, VIN = 0 V, RB 0.001 1.0 µA VEN = 0 V EN pull down resistor REN EN = 1.1 V 20 10 55 MΩ dV/dT control dV/dT Voltage VdV/dT 3.1 2.8 3.4 V Charging Current IdV/dT VdV/dT = 0 V 5 3.5 6.5 µA dV/dT to OUT gain GAINdV/dT VdV/dT = 1V, IOUT = 1A 9.0 8.5 9.5 Over voltage protection OVP threshold, rising VOVPR 1.2 1.14 1.26 V OVP pull down resistor ROVP VOVP = 1.2 V 22 11 60 MΩ FLAG FLAG Output Low Voltage VFLAG_L ISINK_FLAG = 1 mA 0.1 V FLAG Output High leakage IFLAG_LEAK VFLAG = 18 V 1 µA Over current protection VIN = 5 V, RILIM = 1.7 kΩ, 3.65 3.14 4.14 A VIN - VOUT = 2 V VIN = 9 V, RILIM = 2.4 kΩ, 2.58 2.21 2.99 A VIN - VOUT = 2 V VIN = 12 V, RILIM = 3.1 kΩ, 2.00 1.71 2.35 A VIN - VOUT = 2 V Over current limit (Note3) IOUT_CL VIN = 12 V, RILIM = 3.6 kΩ, 1.72 1.47 2.04 A VIN - VOUT = 2 V VIN = 12 V, RILIM = 6.2 kΩ, 1.00 0.78 1.21 A VIN - VOUT = 2 V VIN = 12 V, RILIM = 12 kΩ, 0.51 0.35 0.64 A VIN - VOUT = 2 V I IOUT_CL Fast trip comparator level I OUT_CL FASTTRIP × 2.5 × A 2.0
Thermal Protection
Thermal shut down Threshold TSD Tj 134 °C Note2: This parameter is warranted by design. Note3: Pulsed testing techniques used during this test maintain junction temperature approximately equal to ambient temperature. © 2020 6 2020-12-14 Toshiba Electronic Devices & Storage Corporation
