HMC634 v01.0308 GaAs PHEMT MMIC DRIVERAMPLIFIER, 5 - 20 GHzGain, Power & Output IP3vs. Gate Voltage @ 12.5 GHz 35 210 Idd 2 30 180 Idd (mA) IP Psat (dBm), IP3 (dBm) 25 150 H 20 120 Gain P1dB - C Psat IP3 S 15 90 R GAIN (dB), P1dB (dBm), -0.85 -0.83 -0.8 -0.78 -0.75 -0.73 -0.7 IE Vgg (V) IF L P Absolute Maximum RatingsTypical Supply Current vs. Vdd M Drain Bias Voltage Vdd (V) Idd (mA) +5.5 Vdc (Vdd1, Vdd2, Vdd3, Vdd4) 4.5 175 K A Gate Bias Voltage (Vgg) -3 to 0 Vdc 5.0 180 RF Input Power (RFIN)(Vdd = +5 Vdc) +10 dBm 5.5 182 OC Channel Temperature 175 °C Note: Amplifi er will operate over full voltage ranges shown above Continuous Pdiss (T= 85 °C) 1.07 W (derate 11.93 mW/°C above 85 °C) BL Thermal Resistance 83.8 °C/W IN (channel to die bottom) A Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C & G R ELECTROSTATIC SENSITIVE DEVICE E OBSERVE HANDLING PRECAUTIONS IV R D Information furnis F heod r pri by An ce, de alog Devi lcievs eir s y b , a eliev nd to pla ed to be accu ce o rate anrder d relia sbl, pl e. H ease co owever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone: 978 rights of third parties that may result from its use. Specifications subject to change without notice. No Pho - n25 e 0 : 7 - 81 3 - 3 32 4 9-3 F 470 ax: 978 0 • Orde - r o 25 nlin 0- e a 3 t 373 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com 2 - 53 Order On-l Trademarks and registered trademarks are the property of their respective owners. ine at www.hit A ti p te.co plicati m on Support: Phone: 1-800-ANALOG-D