Datasheet HMC594 (Analog Devices) - 6
| Manufacturer | Analog Devices |
| Description | GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| Pages / Page | 6 / 6 — HMC594. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Mounting & … |
| File Format / Size | PDF / 413 Kb |
| Document Language | English |
HMC594. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
Model Line for this Datasheet
Text Version of Document
HMC594
v01.0312
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HmC general Handling, mounting, Bonding Note). 0.102mm (0.004”) Thick GaAs MMIC 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film Wire Bond ip substrates are recommended for bringing rf to and from the chip (figure 1). if 0.076mm H 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be (0.003”) raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). e - C RF Ground Plane microstrip substrates should be brought as close to the die as possible in order to is minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). o
Handling Precautions
0.127mm (0.005”) Thick Alumina follow these precautions to avoid permanent damage. Thin Film Substrate Figure 1. w N
Storage:
All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry lo 0.102mm (0.004”) Thick GaAs MMIC nitrogen environment.
Cleanliness:
Handle the chips in a clean environment. Do NoT attempt to clean Wire Bond s - the chip using liquid cleaning systems. 0.076mm
Static Sensitivity:
follow esD precautions to protect against > ± 250V esD (0.003”) r strikes. ie
Transients:
suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with RF Ground Plane lif a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and p should not be touched with vacuum collet, tweezers, or fingers. 0.150mm (0.005”) Thick m
Mounting
Moly Tab A 0.254mm (0.010”) Thick Alumina The chip is back-metallized and can be die mounted with Ausn eutectic preforms or Thin Film Substrate with electrically conductive epoxy. The mounting surface should be clean and flat. Figure 2.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do NoT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
6
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v01.0312
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HmC general Handling, mounting, Bonding Note). 0.102mm (0.004”) Thick GaAs MMIC 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film Wire Bond ip substrates are recommended for bringing rf to and from the chip (figure 1). if 0.076mm H 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be (0.003”) raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). e - C RF Ground Plane microstrip substrates should be brought as close to the die as possible in order to is minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). o
Handling Precautions
0.127mm (0.005”) Thick Alumina follow these precautions to avoid permanent damage. Thin Film Substrate Figure 1. w N
Storage:
All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry lo 0.102mm (0.004”) Thick GaAs MMIC nitrogen environment.
Cleanliness:
Handle the chips in a clean environment. Do NoT attempt to clean Wire Bond s - the chip using liquid cleaning systems. 0.076mm
Static Sensitivity:
follow esD precautions to protect against > ± 250V esD (0.003”) r strikes. ie
Transients:
suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with RF Ground Plane lif a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and p should not be touched with vacuum collet, tweezers, or fingers. 0.150mm (0.005”) Thick m
Mounting
Moly Tab A 0.254mm (0.010”) Thick Alumina The chip is back-metallized and can be die mounted with Ausn eutectic preforms or Thin Film Substrate with electrically conductive epoxy. The mounting surface should be clean and flat. Figure 2.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. Do NoT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
6
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
