Datasheet HMC8412TCPZ-EP (Analog Devices) - 6

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HMC8412TCPZ-EP Enhanced Product PIN CONFIGURATION AND FUNCTION DESCRIPTIONS HMC8412TCPZ-EP TOP VIEW (Not to Scale) R 1 6 BIAS VDD GND 2 5 GND RF 3 4 IN RFOUT NOTES 1. EXPOSED PAD. THE EXPOSED PAD
002
MUST BE CONNECTED TO THE RF AND DC GROUND.
25386- Figure 3. Pin Configuration
Table 7. Pin Function Descriptions Pin No. Mnemonic Description
1 RBIAS Current Mirror Bias Resistor. Use the RBIAS pin to set the quiescent current by connecting the external bias resistor. Refer to the HMC8412 data sheet for the bias resistor connection and for recommended bias resistor values. See Figure 4 for the interface schematic. 2, 5 GND Ground. The GND pin must be connected to RF and dc ground. See Figure 7 for the interface schematic. 3 RFIN RF Input. The RFIN pin is ac-coupled and matched to 50 Ω. See Figure 5 for the interface schematic. 4 RFOUT RF Output. The RFOUT pin is ac-coupled and matched to 50 Ω. See Figure 6 for the interface schematic. 6 VDD Drain Supply Voltage for the Amplifier. See Figure 6 for the interface schematic. EPAD Exposed Pad. The exposed pad must be connected to the RF and dc ground.
INTERFACE SCHEMATICS RBIAS VDD RFOUT
003 005 25386- 25386- Figure 4. RBIAS Interface Schematic Figure 6. VDD and RFOUT Interface Schematic 004
GND
006
RFIN
25386- 25386- Figure 5. RFIN Interface Schematic Figure 7. GND Interface Schematic Rev. 0 | Page 6 of 10 Document Outline Features Enhanced Product Features Applications Functional Block Diagram General Description Revision History Specifications 0.4 GHz to 3 GHz Frequency Range 3 GHz to 9 GHz Frequency Range 9 GHz to 11 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance Electrostatic Discharge (ESD) Ratings ESD Ratings for HMC8412TCPZ-EP Power Derating Curves ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Outline Dimensions Ordering Guide