Datasheet HMC8400 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | 2 GHz to 30 GHz, GaAs pHEMT MMIC Low Noise Amplifier |
| Pages / Page | 15 / 1 — 2 GHz to 30 GHz, GaAs. pHEMT MMIC Low Noise Amplifier. Data Sheet. … |
| Revision | B |
| File Format / Size | PDF / 313 Kb |
| Document Language | English |
2 GHz to 30 GHz, GaAs. pHEMT MMIC Low Noise Amplifier. Data Sheet. HMC8400. FEATURES. GENERAL DESCRIPTION
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2 GHz to 30 GHz, GaAs pHEMT MMIC Low Noise Amplifier Data Sheet HMC8400 FEATURES GENERAL DESCRIPTION Output power for 1 dB compression (P1dB): 14.5 dBm typical
The HMC8400 is a gallium arsenide (GaAs), pseudomorphic
Saturated output power (PSAT): 17 dBm typical
high electron mobility transistor (pHEMT), monolithic microwave
Gain: 13.5 dB typical
integrated circuit (MMIC). The HMC8400 is a wideband low
Noise figure: 2 dB
noise amplifier that operates between 2 GHz and 30 GHz. The
Output third-order intercept (IP3): 26.5 dBm typical
amplifier provides 13.5 dB of gain, a 2 dB noise figure, 26.5 dBm
Supply voltage: 5 V at 67 mA
output IP3, and 14.5 dBm of output power at 1 dB gain compres-
50 Ω matched input/output
sion, requiring 67 mA from a 5 V supply. The HMC8400 is self
Die size: 2.7 mm × 1.35 mm × 0.05 mm
biased with only a single positive supply needed to achieve a
APPLICATIONS
drain current IDD of 67 mA. The HMC8400 also has a gain control option, VGG2. The HMC8400 amplifier input/outputs are internally
Test instrumentation
matched to 50 Ω and dc blocked, facilitating integration into
Microwave radios and very small aperture terminals (VSATs)
multichip modules (MCMs). All data is taken with the chip
Military and space
connected via two 0.025 mm (1 mil) wire bonds of minimal
Telecommunications infrastructure
length 0.31 mm (12 mils).
Fiber optics FUNCTIONAL BLOCK DIAGRAM 3 V HMC8400 DD 4 RFOUT VGG2 2 1 RFIN
001 52- 138 Figure 1.
Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2016–2017 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS 2 GHz TO 6 GHz FREQUENCY RANGE 6 GHz TO 20 GHz FREQUENCY RANGE 20 GHz TO 30 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION BIASING PROCEDURES MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
The HMC8400 is a gallium arsenide (GaAs), pseudomorphic
Saturated output power (PSAT): 17 dBm typical
high electron mobility transistor (pHEMT), monolithic microwave
Gain: 13.5 dB typical
integrated circuit (MMIC). The HMC8400 is a wideband low
Noise figure: 2 dB
noise amplifier that operates between 2 GHz and 30 GHz. The
Output third-order intercept (IP3): 26.5 dBm typical
amplifier provides 13.5 dB of gain, a 2 dB noise figure, 26.5 dBm
Supply voltage: 5 V at 67 mA
output IP3, and 14.5 dBm of output power at 1 dB gain compres-
50 Ω matched input/output
sion, requiring 67 mA from a 5 V supply. The HMC8400 is self
Die size: 2.7 mm × 1.35 mm × 0.05 mm
biased with only a single positive supply needed to achieve a
APPLICATIONS
drain current IDD of 67 mA. The HMC8400 also has a gain control option, VGG2. The HMC8400 amplifier input/outputs are internally
Test instrumentation
matched to 50 Ω and dc blocked, facilitating integration into
Microwave radios and very small aperture terminals (VSATs)
multichip modules (MCMs). All data is taken with the chip
Military and space
connected via two 0.025 mm (1 mil) wire bonds of minimal
Telecommunications infrastructure
length 0.31 mm (12 mils).
Fiber optics FUNCTIONAL BLOCK DIAGRAM 3 V HMC8400 DD 4 RFOUT VGG2 2 1 RFIN
001 52- 138 Figure 1.
Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2016–2017 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS 2 GHz TO 6 GHz FREQUENCY RANGE 6 GHz TO 20 GHz FREQUENCY RANGE 20 GHz TO 30 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION BIASING PROCEDURES MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICs Handling Precautions Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE
