Datasheet HMC903 (Analog Devices) - 9
| Manufacturer | Analog Devices |
| Description | 6 GHz to 18 GHz GaAs, pHEMT, MMIC, Low Noise Amplifier |
| Pages / Page | 13 / 9 — Data Sheet. HMC903. APPLICATIONS INFORMATION |
| Revision | C |
| File Format / Size | PDF / 212 Kb |
| Document Language | English |
Data Sheet. HMC903. APPLICATIONS INFORMATION
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Data Sheet HMC903 APPLICATIONS INFORMATION
Figure 25 shows the basic connections for operating the HMC903 The recommended bias sequence during power-down is as follows: in self biased operation. Both the RFIN and the RFOUT ports 1. Turn off the RF signal. have on-chip dc block capacitors, eliminating the need for 2. Decrease VGG1 and VGG2 to −2 V to achieve a typical IDQ = external ac coupling capacitors. 0 mA. The HMC903 has VGG1 and VGG2 optional gate bias pads. When 3. Decrease VDD1 and VDD2 to 0 V. these pads are left open, the amplifier runs in self biased operation 4. Increase VGG1 and VGG2 to 0 V. with typical IDQ = 90 mA when VDD = 3.5 V. When using the The bias conditions previously listed (V optional V DD1 and VDD2 = 3.5 V GG1 and VGG2 gate bias pads, use the recommended and I bias sequencing to prevent damage to the amplifier. DQ = 90 mA) are the recommended operating points to achieve optimum performance. The data used in this data sheet The recommended bias sequence during power-up is as follows: is taken with the recommended bias conditions listed in the 1. Connect to GND. Electrical Specifications section. If the HMC903 is used with 2. Set V different bias conditions than what is recommended, a different GG1 and VGG2 to −2 V. 3. Set V performance than what is shown in the Typical Performance DD1 and VDD2 to +3.5 V. 4. Increase V Characteristics section can result. Decreasing the V GG1 and VGG2 to achieve a typical IDQ = 90 mA. DD level has 5. Apply the RF signal. a negligible effect on gain and NF performance, but reduces P1dB. This behavior is shown in Figure 18. For applications where the P1dB requirement is not stringent, the HMC903 can be down biased to reduce power consumption. Rev. C | Page 9 of 13 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUITS ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE
Data Sheet HMC903 APPLICATIONS INFORMATION
Figure 25 shows the basic connections for operating the HMC903 The recommended bias sequence during power-down is as follows: in self biased operation. Both the RFIN and the RFOUT ports 1. Turn off the RF signal. have on-chip dc block capacitors, eliminating the need for 2. Decrease VGG1 and VGG2 to −2 V to achieve a typical IDQ = external ac coupling capacitors. 0 mA. The HMC903 has VGG1 and VGG2 optional gate bias pads. When 3. Decrease VDD1 and VDD2 to 0 V. these pads are left open, the amplifier runs in self biased operation 4. Increase VGG1 and VGG2 to 0 V. with typical IDQ = 90 mA when VDD = 3.5 V. When using the The bias conditions previously listed (V optional V DD1 and VDD2 = 3.5 V GG1 and VGG2 gate bias pads, use the recommended and I bias sequencing to prevent damage to the amplifier. DQ = 90 mA) are the recommended operating points to achieve optimum performance. The data used in this data sheet The recommended bias sequence during power-up is as follows: is taken with the recommended bias conditions listed in the 1. Connect to GND. Electrical Specifications section. If the HMC903 is used with 2. Set V different bias conditions than what is recommended, a different GG1 and VGG2 to −2 V. 3. Set V performance than what is shown in the Typical Performance DD1 and VDD2 to +3.5 V. 4. Increase V Characteristics section can result. Decreasing the V GG1 and VGG2 to achieve a typical IDQ = 90 mA. DD level has 5. Apply the RF signal. a negligible effect on gain and NF performance, but reduces P1dB. This behavior is shown in Figure 18. For applications where the P1dB requirement is not stringent, the HMC903 can be down biased to reduce power consumption. Rev. C | Page 9 of 13 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding TYPICAL APPLICATION CIRCUITS ASSEMBLY DIAGRAMS OUTLINE DIMENSIONS ORDERING GUIDE
