Datasheet HMC753 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | 1 GHz to 11 GHz, GaAs, HEMT, MMIC Low Noise Amplifier |
| Pages / Page | 13 / 4 — HMC753. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 3. Parameter. Rating. … |
| Revision | E |
| File Format / Size | PDF / 282 Kb |
| Document Language | English |
HMC753. Data Sheet. ABSOLUTE MAXIMUM RATINGS Table 3. Parameter. Rating. ESD CAUTION
Model Line for this Datasheet
Text Version of Document
HMC753 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 3.
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage 6.0 V or any other conditions above those indicated in the operational RF Input Power 12 dBm section of this specification is not implied. Operation beyond Gate Bias Voltage the maximum operating conditions for extended periods may VGG1 −1.4 V to +0.3 V affect product reliability. VGG2 0 V to 2.5 V Channel Temperature 180°C
ESD CAUTION
Continuous PDISS (TA) = 85°C), Derate 8.4 mW/°C Above 85°C 0.8 W Thermal Resistance (Channel to Die Bottom) 119°C/W Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +85°C ESD Sensitivity Human Body Model (HBM) Class 0, Passed 100 V Rev. E | Page 4 of 13 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Evaluation PCB Outline Dimensions Ordering Guide
Stresses at or above those listed under Absolute Maximum
Parameter Rating
Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these Drain Bias Voltage 6.0 V or any other conditions above those indicated in the operational RF Input Power 12 dBm section of this specification is not implied. Operation beyond Gate Bias Voltage the maximum operating conditions for extended periods may VGG1 −1.4 V to +0.3 V affect product reliability. VGG2 0 V to 2.5 V Channel Temperature 180°C
ESD CAUTION
Continuous PDISS (TA) = 85°C), Derate 8.4 mW/°C Above 85°C 0.8 W Thermal Resistance (Channel to Die Bottom) 119°C/W Storage Temperature Range −65°C to +150°C Operating Temperature Range −40°C to +85°C ESD Sensitivity Human Body Model (HBM) Class 0, Passed 100 V Rev. E | Page 4 of 13 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Evaluation PCB Outline Dimensions Ordering Guide
