Datasheet HMC753 (Analog Devices) - 9
| Manufacturer | Analog Devices |
| Description | 1 GHz to 11 GHz, GaAs, HEMT, MMIC Low Noise Amplifier |
| Pages / Page | 13 / 9 — Data Sheet. HMC753. THEORY OF OPERATION. RFIN. RFOUT |
| Revision | E |
| File Format / Size | PDF / 282 Kb |
| Document Language | English |
Data Sheet. HMC753. THEORY OF OPERATION. RFIN. RFOUT
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Data Sheet HMC753 THEORY OF OPERATION
The circuit architecture of the HMC753 wideband, low noise The input and output impedances are sufficiently stable over amplifier is shown in Figure 20. The HMC753 uses a single gain variations in temperature and supply voltage that no impedance stage to form an amplifier with typical gain of 16.5 dB at 1 GHz matching compensation is required. to 6 GHz and 14 dB at the 6 GHz to 11 GHz frequency band. Both RF input and RF output ports have on-chip dc block capacitors, which eliminates the need for external ac coupling
HMC753
capacitors.
RFIN RFOUT
It is critical to supply very low inductance ground connections to the ground pins as well as to the backside exposed paddle. This ensures stable operation. 2 -02 94 To achieve the best performance out of the HMC753 and not to 134 Figure 20. Wideband Low Noise Amplifier Circuit Architecture damage the device, the recommended biasing sequence must be followed; see the Applications Information section for further The HMC753 has single-ended input and output ports whose details. impedances are nominally equal to 50 Ω over the frequency range of 1 GHz to 11 GHz. Consequently, the HMC753 can be directly inserted into a 50 Ω system with no impedance matching circuitry required. In addition, multiple HMC753 amplifiers can be cascaded back to back without the need of external matching circuitry. Rev. E | Page 9 of 13 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Evaluation PCB Outline Dimensions Ordering Guide
Data Sheet HMC753 THEORY OF OPERATION
The circuit architecture of the HMC753 wideband, low noise The input and output impedances are sufficiently stable over amplifier is shown in Figure 20. The HMC753 uses a single gain variations in temperature and supply voltage that no impedance stage to form an amplifier with typical gain of 16.5 dB at 1 GHz matching compensation is required. to 6 GHz and 14 dB at the 6 GHz to 11 GHz frequency band. Both RF input and RF output ports have on-chip dc block capacitors, which eliminates the need for external ac coupling
HMC753
capacitors.
RFIN RFOUT
It is critical to supply very low inductance ground connections to the ground pins as well as to the backside exposed paddle. This ensures stable operation. 2 -02 94 To achieve the best performance out of the HMC753 and not to 134 Figure 20. Wideband Low Noise Amplifier Circuit Architecture damage the device, the recommended biasing sequence must be followed; see the Applications Information section for further The HMC753 has single-ended input and output ports whose details. impedances are nominally equal to 50 Ω over the frequency range of 1 GHz to 11 GHz. Consequently, the HMC753 can be directly inserted into a 50 Ω system with no impedance matching circuitry required. In addition, multiple HMC753 amplifiers can be cascaded back to back without the need of external matching circuitry. Rev. E | Page 9 of 13 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Electrical Specifications Absolute Maximum Ratings ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Biasing Procedures Evaluation PCB Outline Dimensions Ordering Guide
