Datasheet HMC606 (Analog Devices) - 5
| Manufacturer | Analog Devices |
| Description | GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz |
| Pages / Page | 7 / 5 — HMC606. GaAs InGaP HBT MMIC ULTRA LOW. PHASE NOISE, DISTRIBUTED … |
| File Format / Size | PDF / 678 Kb |
| Document Language | English |
HMC606. GaAs InGaP HBT MMIC ULTRA LOW. PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz. Absolute Maximum Ratings
Model Line for this Datasheet
Text Version of Document
HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Absolute Maximum Ratings Typical Supply Current vs. Vcc1, Vcc2
Vdd1= Vdd2= 5V 7V Vcc1= Vcc2 (V) Icc1 + Icc2 (mA) IP RF Input Power (RFIN) +15 dBm +4.5 53 H Channel Temperature 175 °C +5.0 64 +5.5 74 C Continuous Pdiss (T = 85 °C) 1.32 W - (derate 14.6 mW/°C above 85 °C) S Thermal Resistance 68.37 °C/W R (channel to die bottom) ELECTROSTATIC SENSITIVE DEVICE Storage Temperature -65 to +150 °C OBSERVE HANDLING PRECAUTIONS IE Operating Temperature -55 to +85 °C LIF P M A E
Outline Drawing
IS O N W LO
Die Packaging Information
[1] NOTES: Standard Alternate 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS GP-1 (Gel Pack) [2] 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE [1] Refer to the “Packaging Information” section for die 5. BACKSIDE METALLIZATION: GOLD packaging dimensions. 6. BACKSIDE METAL IS GROUND [2] For alternate packaging information contact Hittite 7. BOND PAD METALIZATION: GOLD Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Absolute Maximum Ratings Typical Supply Current vs. Vcc1, Vcc2
Vdd1= Vdd2= 5V 7V Vcc1= Vcc2 (V) Icc1 + Icc2 (mA) IP RF Input Power (RFIN) +15 dBm +4.5 53 H Channel Temperature 175 °C +5.0 64 +5.5 74 C Continuous Pdiss (T = 85 °C) 1.32 W - (derate 14.6 mW/°C above 85 °C) S Thermal Resistance 68.37 °C/W R (channel to die bottom) ELECTROSTATIC SENSITIVE DEVICE Storage Temperature -65 to +150 °C OBSERVE HANDLING PRECAUTIONS IE Operating Temperature -55 to +85 °C LIF P M A E
Outline Drawing
IS O N W LO
Die Packaging Information
[1] NOTES: Standard Alternate 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS GP-1 (Gel Pack) [2] 3. DIE THICKNESS IS 0.004 (0.100) 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE [1] Refer to the “Packaging Information” section for die 5. BACKSIDE METALLIZATION: GOLD packaging dimensions. 6. BACKSIDE METAL IS GROUND [2] For alternate packaging information contact Hittite 7. BOND PAD METALIZATION: GOLD Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
5
Application Support: Phone: 1-800-ANALOG-D
