Datasheet HMC606 (Analog Devices) - 7
| Manufacturer | Analog Devices |
| Description | GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz |
| Pages / Page | 7 / 7 — HMC606. GaAs InGaP HBT MMIC ULTRA LOW. PHASE NOISE, DISTRIBUTED … |
| File Format / Size | PDF / 678 Kb |
| Document Language | English |
HMC606. GaAs InGaP HBT MMIC ULTRA LOW. PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz
Model Line for this Datasheet
Text Version of Document
HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectical y or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.102mm (0.004”) Thick GaAs MMIC IP H 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina Wire Bond thin film substrates are recommended for bringing RF to and from the chip 0.076mm C (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be (0.003”) - used, the die should be raised 0.150mm (6 mils) so that the surface of S the die is coplanar with the surface of the substrate. One way to accom- R plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the RF Ground Plane IE ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in LIF order to minimize bond wire length. Typical die-to-substrate spacing is 0.127mm (0.005”) Thick Alumina P 0.076mm to 0.152 mm (3 to 6 mils). Thin Film Substrate Figure 1. M
Handling Precautions
A Follow these precautions to avoid permanent damage. 0.102mm (0.004”) Thick GaAs MMIC E
Storage:
All bare die are placed in either Waffle or Gel based ESD protec- IS tive containers, and then sealed in an ESD protective bag for shipment. Wire Bond 0.076mm O Once the sealed ESD protective bag has been opened, all die should be (0.003”) stored in a dry nitrogen environment. N
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt W to clean the chip using liquid cleaning systems. RF Ground Plane
Static Sensitivity:
Fol ow ESD precautions to protect against ESD strikes. LO
Transients:
Suppress instrument and bias supply transients while bias is 0.150mm (0.005”) Thick Moly Tab applied. Use shielded signal and bias cables to minimize inductive pick- 0.254mm (0.010”) Thick Alumina up. Thin Film Substrate
General Handling:
Handle the chip along the edges with a vacuum col et Figure 2. or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum col et, tweezers, or fingers.
Mounting
The chip is back-metal ized and can be die mounted with electrical y conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fil et is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectical y or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 0.102mm (0.004”) Thick GaAs MMIC IP H 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina Wire Bond thin film substrates are recommended for bringing RF to and from the chip 0.076mm C (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be (0.003”) - used, the die should be raised 0.150mm (6 mils) so that the surface of S the die is coplanar with the surface of the substrate. One way to accom- R plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the RF Ground Plane IE ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in LIF order to minimize bond wire length. Typical die-to-substrate spacing is 0.127mm (0.005”) Thick Alumina P 0.076mm to 0.152 mm (3 to 6 mils). Thin Film Substrate Figure 1. M
Handling Precautions
A Follow these precautions to avoid permanent damage. 0.102mm (0.004”) Thick GaAs MMIC E
Storage:
All bare die are placed in either Waffle or Gel based ESD protec- IS tive containers, and then sealed in an ESD protective bag for shipment. Wire Bond 0.076mm O Once the sealed ESD protective bag has been opened, all die should be (0.003”) stored in a dry nitrogen environment. N
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt W to clean the chip using liquid cleaning systems. RF Ground Plane
Static Sensitivity:
Fol ow ESD precautions to protect against ESD strikes. LO
Transients:
Suppress instrument and bias supply transients while bias is 0.150mm (0.005”) Thick Moly Tab applied. Use shielded signal and bias cables to minimize inductive pick- 0.254mm (0.010”) Thick Alumina up. Thin Film Substrate
General Handling:
Handle the chip along the edges with a vacuum col et Figure 2. or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum col et, tweezers, or fingers.
Mounting
The chip is back-metal ized and can be die mounted with electrical y conductive epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fil et is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D
