Datasheet HMC606 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz |
| Pages / Page | 7 / 3 — HMC606. GaAs InGaP HBT MMIC ULTRA LOW. PHASE NOISE, DISTRIBUTED … |
| File Format / Size | PDF / 678 Kb |
| Document Language | English |
HMC606. GaAs InGaP HBT MMIC ULTRA LOW. PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz. P1dB vs. Temperature
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Text Version of Document
HMC606
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz P1dB vs. Temperature Psat vs. Temperature
20 25 IP 18 23 H 16 21 14 19 C ) m - 12 m 17 B (dB d S 10 t ( 15 a 1dB R s 8 P P 13 +25C IE 6 +85C 11 +25C -55C +85C 4 9 -55C LIF 2 7 P 0 5 M 2 4 6 8 10 12 14 16 18 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) A FREQUENCY (GHz) E IS
Additive Phase Noise vs. Offset Frequency, Output IP3 vs. Temperature
O
RF Frequency = 12 GHz, At Small Signal
N 35 -80 ) z -90 W 30 /H -100 Bc (d -110 LO 25 ) ISE m O -120 N (dB 20 -130 3 ASE IP -140 +25C PH 15 +85C -55C -150 IVE IT -160 10 D AD -170 5 -180 2 4 6 8 10 12 14 16 18 10 100 1K 10K 100K 1M FREQUENCY (GHz) OFFSET FREQUENCY (Hz)
Additive Phase Noise Vs Offset Frequency, RF Additive Phase Noise Vs Offset Frequency, RF Frequency = 12 GHz, Frequency = 12 GHz, RF Input Power = 3 dBm (P1dB) RF Input Power = 9 dBm (Psat)
-80 -70 ) z -90 -80 z) /H -100 c/H -90 Bc (d -100 -110 (dB ISE ISE -110 O -120 O N -120 N -130 -130 ASE ASE -140 H PH -140 -150 IVE -150 IT -160 D -160 AD -170 ADDITIVE P -170 -180 -180 10 100 1K 10K 100K 1M 10 100 1K 10K 100K 1M OFFSET FREQUENCY (Hz) OFFSET FREQUENCY (Hz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
3
Application Support: Phone: 1-800-ANALOG-D
v04.0118
GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz P1dB vs. Temperature Psat vs. Temperature
20 25 IP 18 23 H 16 21 14 19 C ) m - 12 m 17 B (dB d S 10 t ( 15 a 1dB R s 8 P P 13 +25C IE 6 +85C 11 +25C -55C +85C 4 9 -55C LIF 2 7 P 0 5 M 2 4 6 8 10 12 14 16 18 2 4 6 8 10 12 14 16 18 FREQUENCY (GHz) A FREQUENCY (GHz) E IS
Additive Phase Noise vs. Offset Frequency, Output IP3 vs. Temperature
O
RF Frequency = 12 GHz, At Small Signal
N 35 -80 ) z -90 W 30 /H -100 Bc (d -110 LO 25 ) ISE m O -120 N (dB 20 -130 3 ASE IP -140 +25C PH 15 +85C -55C -150 IVE IT -160 10 D AD -170 5 -180 2 4 6 8 10 12 14 16 18 10 100 1K 10K 100K 1M FREQUENCY (GHz) OFFSET FREQUENCY (Hz)
Additive Phase Noise Vs Offset Frequency, RF Additive Phase Noise Vs Offset Frequency, RF Frequency = 12 GHz, Frequency = 12 GHz, RF Input Power = 3 dBm (P1dB) RF Input Power = 9 dBm (Psat)
-80 -70 ) z -90 -80 z) /H -100 c/H -90 Bc (d -100 -110 (dB ISE ISE -110 O -120 O N -120 N -130 -130 ASE ASE -140 H PH -140 -150 IVE -150 IT -160 D -160 AD -170 ADDITIVE P -170 -180 -180 10 100 1K 10K 100K 1M 10 100 1K 10K 100K 1M OFFSET FREQUENCY (Hz) OFFSET FREQUENCY (Hz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
3
Application Support: Phone: 1-800-ANALOG-D
