Datasheet HMC460 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz |
| Pages / Page | 8 / 4 — HMC460. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, DC - 20 GHz. Absolute … |
| File Format / Size | PDF / 549 Kb |
| Document Language | English |
HMC460. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, DC - 20 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
Model Line for this Datasheet
Text Version of Document
HMC460
v10.0818
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2 to 0 Vdc +7.5 59 Gate Bias Voltage (Igg) 2.5 mA IP +8.0 60 RF Input Power (RFIN)(Vdd = +8 Vdc) +18 dBm H +8.5 62 Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) 2.17 W (derate 24 mW/°C above 85 °C) E - C Thermal Resistance 41.5 °C/W (channel to die bottom) IS Storage Temperature -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE O Operating Temperature -55 to +85 °C OBSERVE HANDLING PRECAUTIONS ESD Sensitivity (HBM) Class 1A W N O
Outline Drawing
S - L R IE LIF P M A NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) Standard Alternate 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD GP-1 (Gel Pack) [2] 6. BACKSIDE METAL IS GROUND [1] Refer to the “Packaging Information” section for die 7. BOND PAD METALIZATION: GOLD packaging dimensions. [2] For alternate packaging information contact Analog Devices, Inc. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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v10.0818
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +9 Vdc Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -2 to 0 Vdc +7.5 59 Gate Bias Voltage (Igg) 2.5 mA IP +8.0 60 RF Input Power (RFIN)(Vdd = +8 Vdc) +18 dBm H +8.5 62 Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) 2.17 W (derate 24 mW/°C above 85 °C) E - C Thermal Resistance 41.5 °C/W (channel to die bottom) IS Storage Temperature -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE O Operating Temperature -55 to +85 °C OBSERVE HANDLING PRECAUTIONS ESD Sensitivity (HBM) Class 1A W N O
Outline Drawing
S - L R IE LIF P M A NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 3. DIE THICKNESS IS 0.004 (0.100) Standard Alternate 4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 5. BACKSIDE METALLIZATION: GOLD GP-1 (Gel Pack) [2] 6. BACKSIDE METAL IS GROUND [1] Refer to the “Packaging Information” section for die 7. BOND PAD METALIZATION: GOLD packaging dimensions. [2] For alternate packaging information contact Analog Devices, Inc. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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