Datasheet HMC1087F10 (Analog Devices) - 7
| Manufacturer | Analog Devices |
| Description | 8 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 20 GHz |
| Pages / Page | 12 / 7 — HMC1087F10. 8 WATT Flange Mount GaN MMIC. POWER AMPLIFIER, 2 - 20 GHz. … |
| File Format / Size | PDF / 733 Kb |
| Document Language | English |
HMC1087F10. 8 WATT Flange Mount GaN MMIC. POWER AMPLIFIER, 2 - 20 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
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Text Version of Document
HMC1087F10
v04.1217
8 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +32 Vdc Vdd (V) idd (mA) T Gate Bias Voltage (Vgg) -8 to 0 Vdc +24 850 m rf input power (rfin) +34 dBm +28 850 s Channel Temperature 225 °C +32 850 maximum pdiss (T= 85 °C) r - (derate 236 mw/°C above 85 33 w e °C) Thermal resistance w 4.24 °C/w (channel to flange bottom) Adjust Vgg to achieve idd = 850 mA o maximum forward 4 mA p Gate Current (mA) maximum Vswr
[1]
6:1
Amplifier Turn-on Procedure:
storage Temperature r & -65 to 150°C
[2]
1.) set Vgg to -5V. A operating Temperature -40 to 85 °C 2.) set Vdd to +28V. e 3.) ramp gate voltage until quiescent drain current = [1] restricted by maximum power dissipation. 850 mA. [2] This device is not surface mountable and is not intended nor lin 4.) Apply rf input power. suitable to be used in a solder reflow process. This device must not be exposed to ambient temperatures above +150°C. s - r
Amplifier Turn-off Procedure:
ie 1.) remove rf input power. 2.) set Vgg to -5V. lif 3.) set Vdd to 0V. p 4.) set Vgg to 0V. m A eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Low Frequency Gain & Return Loss Noise Figure vs. Frequency P1dB vs. Temperature Psat vs. Temperature P1dB vs. Vdd Psat vs. Vdd Output IP3 vs. Temperature @ Pout = 18 dBm Tone Power Compression @ 10 GHz Power Dissipation Second Harmonics vs. Temperature @ Pout = 18 dBm Second Harmonics vs. Vdd @ Pout = 18 dBm Second Harmonics vs. Pout Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit
v04.1217
8 WATT Flange Mount GaN MMIC POWER AMPLIFIER, 2 - 20 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +32 Vdc Vdd (V) idd (mA) T Gate Bias Voltage (Vgg) -8 to 0 Vdc +24 850 m rf input power (rfin) +34 dBm +28 850 s Channel Temperature 225 °C +32 850 maximum pdiss (T= 85 °C) r - (derate 236 mw/°C above 85 33 w e °C) Thermal resistance w 4.24 °C/w (channel to flange bottom) Adjust Vgg to achieve idd = 850 mA o maximum forward 4 mA p Gate Current (mA) maximum Vswr
[1]
6:1
Amplifier Turn-on Procedure:
storage Temperature r & -65 to 150°C
[2]
1.) set Vgg to -5V. A operating Temperature -40 to 85 °C 2.) set Vdd to +28V. e 3.) ramp gate voltage until quiescent drain current = [1] restricted by maximum power dissipation. 850 mA. [2] This device is not surface mountable and is not intended nor lin 4.) Apply rf input power. suitable to be used in a solder reflow process. This device must not be exposed to ambient temperatures above +150°C. s - r
Amplifier Turn-off Procedure:
ie 1.) remove rf input power. 2.) set Vgg to -5V. lif 3.) set Vdd to 0V. p 4.) set Vgg to 0V. m A eleCTrosTATiC sensiTiVe DeViCe oBserVe HAnDlinG preCAUTions For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
7
Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature Low Frequency Gain & Return Loss Noise Figure vs. Frequency P1dB vs. Temperature Psat vs. Temperature P1dB vs. Vdd Psat vs. Vdd Output IP3 vs. Temperature @ Pout = 18 dBm Tone Power Compression @ 10 GHz Power Dissipation Second Harmonics vs. Temperature @ Pout = 18 dBm Second Harmonics vs. Vdd @ Pout = 18 dBm Second Harmonics vs. Pout Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Application Circuit
