Datasheet HMC455LP3, 455LP3E (Analog Devices)
| Manufacturer | Analog Devices |
| Description | InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz |
| Pages / Page | 6 / 1 — HMC455LP3 / 455LP3E. InGaP HBT ½ Watt High IP3. AMPLIFIER, 1.7 - 2.5 GHz. … |
| File Format / Size | PDF / 376 Kb |
| Document Language | English |
HMC455LP3 / 455LP3E. InGaP HBT ½ Watt High IP3. AMPLIFIER, 1.7 - 2.5 GHz. Typical Applications. Features. Functional Diagram
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Text Version of Document
HMC455LP3 / 455LP3E
v02.0605
InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features
This amplifi er is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE 56% PAE @ +28 dBm Pout • CDMA & WCDMA +19 dBm W-CDMA Channel Power @ -45 dBc ACP 11 • PHS 3x3 mm QFN SMT Package
Functional Diagram General Description
T The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifi ers operating between 1.7 - SM and 2.5 GHz. Utilizing a minimum number of external S components the amplifi er provides 13 dB of gain and R +28 dBm of saturated power at 56% PAE from a single IE +5 Vdc supply voltage. The high output IP3 of +42 IF dBm coupled with the low VSWR of 1.4:1 make the L HMC455LP3 & HMC455LP3E ideal driver amplifi ers for P PCS/3G wireless infrastructures. A low cost, leadless M 3x3 mm QFN surface mount package (LP3) houses the linear amplifi er. The LP3 provides an exposed R A base for excellent RF and thermal performance. E W O & P R A
Electrical Specifi cations, T = +25° C, Vs= +5V A
E Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units IN Frequency Range 1.7 - 1.9 1.9 - 2.2 2.2 - 2.5 GHz L Gain 11.5 13.5 10.5 13 9 11.5 dB Gain Variation Over Temperature 0.012 0.02 0.012 0.02 0.012 0.02 dB / °C Input Return Loss 13 15 10 dB Output Return Loss 10 18 15 dB Output Power for 1dB Compression (P1dB) 24 27 24.5 27.5 23 26 dBm Saturated Output Power (Psat) 28.5 28 27 dBm Output Third Order Intercept (IP3) 37 40 39 42 37 40 dBm Noise Figure 7 6 6 dB Supply Current (Icq) 150 150 150 mA Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
11 - 234
w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0605
InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features
This amplifi er is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE 56% PAE @ +28 dBm Pout • CDMA & WCDMA +19 dBm W-CDMA Channel Power @ -45 dBc ACP 11 • PHS 3x3 mm QFN SMT Package
Functional Diagram General Description
T The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifi ers operating between 1.7 - SM and 2.5 GHz. Utilizing a minimum number of external S components the amplifi er provides 13 dB of gain and R +28 dBm of saturated power at 56% PAE from a single IE +5 Vdc supply voltage. The high output IP3 of +42 IF dBm coupled with the low VSWR of 1.4:1 make the L HMC455LP3 & HMC455LP3E ideal driver amplifi ers for P PCS/3G wireless infrastructures. A low cost, leadless M 3x3 mm QFN surface mount package (LP3) houses the linear amplifi er. The LP3 provides an exposed R A base for excellent RF and thermal performance. E W O & P R A
Electrical Specifi cations, T = +25° C, Vs= +5V A
E Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units IN Frequency Range 1.7 - 1.9 1.9 - 2.2 2.2 - 2.5 GHz L Gain 11.5 13.5 10.5 13 9 11.5 dB Gain Variation Over Temperature 0.012 0.02 0.012 0.02 0.012 0.02 dB / °C Input Return Loss 13 15 10 dB Output Return Loss 10 18 15 dB Output Power for 1dB Compression (P1dB) 24 27 24.5 27.5 23 26 dBm Saturated Output Power (Psat) 28.5 28 27 dBm Output Third Order Intercept (IP3) 37 40 39 42 37 40 dBm Noise Figure 7 6 6 dB Supply Current (Icq) 150 150 150 mA Information furnish F e o d r pri by An ce, de alog Devic leis vie s rbyeli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. : 978 Phon -e25 : 7 0 81 -3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73
11 - 234
w.analog.com Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D
