Datasheet ADG5208-EP, ADG5209-EP (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers |
| Pages / Page | 20 / 3 — Enhanced Product. ADG5208-EP/ADG5209-EP. SPECIFICATIONS ±15 V DUAL … |
| Revision | ADG5208-EP/ADG5209-EP: Enhanced Data Sheet |
| File Format / Size | PDF / 424 Kb |
| Document Language | English |
Enhanced Product. ADG5208-EP/ADG5209-EP. SPECIFICATIONS ±15 V DUAL SUPPLY. Table 1. Parameter. 25°C
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Enhanced Product ADG5208-EP/ADG5209-EP SPECIFICATIONS ±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA; see Figure 26 200 250 280 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match Between 3.5 Ω typ VS = ±10 V, IS = −1 mA Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 40 Ω typ VS = ±10 V, IS = −1 mA 50 65 70 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 28 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 28 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±10 V; see Figure 25 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 150 ns typ RL = 300 Ω, CL = 35 pF 180 210 245 ns max VS = 10 V; see Figure 31 tON (EN) 125 ns typ RL = 300 Ω, CL = 35 pF 150 185 215 ns max VS = 10 V; see Figure 33 tOFF (EN) 160 ns typ RL = 300 Ω, CL = 35 pF 185 210 230 ns max VS = 10 V; see Figure 33 Break-Before-Make Time Delay, tD 55 ns typ RL = 300 Ω, CL = 35 pF 20 ns min VS1 = VS2 = 10 V; see Figure 32 Charge Injection, QINJ 0.2 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 34 Off Isolation −86 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 30 ADG5208-EP 110 MHz typ ADG5209-EP 240 MHz typ Insertion Loss −6.4 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 30 CS (Off) 2.9 pF typ VS = 0 V, f = 1 MHz CD (Off) ADG5208-EP 34 pF typ VS = 0 V, f = 1 MHz ADG5209-EP 17 pF typ VS = 0 V, f = 1 MHz Rev. C | Page 3 of 20 Document Outline Features Applications General Description Functional Block Diagram Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide
Enhanced Product ADG5208-EP/ADG5209-EP SPECIFICATIONS ±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1. Parameter 25°C −40°C to +85°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 160 Ω typ VS = ±10 V, IS = −1 mA; see Figure 26 200 250 280 Ω max VDD = +13.5 V, VSS = −13.5 V On-Resistance Match Between 3.5 Ω typ VS = ±10 V, IS = −1 mA Channels, ∆RON 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 40 Ω typ VS = ±10 V, IS = −1 mA 50 65 70 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 28 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = ±10 V, VD = 10 V; see Figure 28 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±10 V; see Figure 25 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 150 ns typ RL = 300 Ω, CL = 35 pF 180 210 245 ns max VS = 10 V; see Figure 31 tON (EN) 125 ns typ RL = 300 Ω, CL = 35 pF 150 185 215 ns max VS = 10 V; see Figure 33 tOFF (EN) 160 ns typ RL = 300 Ω, CL = 35 pF 185 210 230 ns max VS = 10 V; see Figure 33 Break-Before-Make Time Delay, tD 55 ns typ RL = 300 Ω, CL = 35 pF 20 ns min VS1 = VS2 = 10 V; see Figure 32 Charge Injection, QINJ 0.2 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 34 Off Isolation −86 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 30 ADG5208-EP 110 MHz typ ADG5209-EP 240 MHz typ Insertion Loss −6.4 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 30 CS (Off) 2.9 pF typ VS = 0 V, f = 1 MHz CD (Off) ADG5208-EP 34 pF typ VS = 0 V, f = 1 MHz ADG5209-EP 17 pF typ VS = 0 V, f = 1 MHz Rev. C | Page 3 of 20 Document Outline Features Applications General Description Functional Block Diagram Product Highlights Table of Contents Revision History Specifications ±15 V Dual Supply ±20 V Dual Supply 12 V Single Supply 36 V Single Supply Continuous Current per Channel, Sx, D, or Dx Absolute Maximum Ratings ESD Caution Pin Configurations and Function Descriptions Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide
