Datasheet ADG1436-EP (Analog Devices) - 5
| Manufacturer | Analog Devices |
| Description | 1.5 Ω On Resistance, ±15 V/12 V/±5 V, iCMOS , Dual SPDT Switch |
| Pages / Page | 10 / 5 — Enhanced Product. ADG1436-EP. 5 V DUAL SUPPLY. Table 3. Parameter. 25°C. … |
| File Format / Size | PDF / 253 Kb |
| Document Language | English |
Enhanced Product. ADG1436-EP. 5 V DUAL SUPPLY. Table 3. Parameter. 25°C. −55°C to +125°C. Unit. Test Conditions/Comments
Model Line for this Datasheet
Text Version of Document
Enhanced Product ADG1436-EP 5 V DUAL SUPPLY
VDD = 5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 3. Parameter 25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 3.3 Ω typ VS = ±4.5 V, IS = −10 mA 4 5.4 Ω max VDD = +4.5 V, VSS = −4.5 V On-Resistance Match Between Channels, ∆RON 0.13 Ω typ VS = ±4.5 V, IS = −10 mA 0.22 0.25 Ω max On-Resistance Flatness, RFLAT(ON) 0.9 Ω typ VS = ±4.5 V, IS = −10 mA 1.1 1.31 Ω max Continuous Current Per Channel1 240 100 mA max VDD = +4.5 V, VSS = −4. 5 V LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V Source Off Leakage, IS (Off) ±0.03 nA typ VS = ±4.5 V, VD = ∓4.5 V ±0.2 ±12.5 nA max Drain Off Leakage, ID (Off) ±0.03 nA typ VS = ±4.5 V, VD = ∓4.5 V ±0.2 ±12.5 nA max Channel On Leakage, ID, IS (On) ±0.05 nA typ VS = VD = ±4.5 V ±0.25 ±35 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.001 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3.5 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 310 ns typ RL = 300 Ω, CL = 35 pF 445 565 ns max VS = 3 V Break-Before-Make Time Delay, tBBM 80 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 3 V Charge Injection 30 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF Off Isolation −80 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz Total Harmonic Distortion + Noise 0.03 % typ RL = 110 Ω, 2.5 V pp, f = 20 Hz to 20 kHz −3 dB Bandwidth 85 MHz typ RL = 50 Ω, CL = 5 pF Insertion Loss −0.28 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz CS (Off) 33 pF typ VS = 0 V, f = 1 MHz CD (Off) 65 pF typ VS = 0 V, f = 1 MHz CD, CS (On) 145 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V IDD 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max VDD/VSS ±4.5/±16.5 V min/max GND = 0 V 1 Guaranteed by design, not subject to production test. Rev. 0 | Page 5 of 10 Document Outline Features Applications Enhanced Product Features Functional Block Diagram General Description Revision History Specifications 15 V Dual Supply 12 V Single Supply 5 V Dual Supply Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configurations and Function Descriptions Truth Table For Switches Typical Performance Characteristics Outline Dimensions Ordering Guide
VDD = 5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 3. Parameter 25°C −55°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 3.3 Ω typ VS = ±4.5 V, IS = −10 mA 4 5.4 Ω max VDD = +4.5 V, VSS = −4.5 V On-Resistance Match Between Channels, ∆RON 0.13 Ω typ VS = ±4.5 V, IS = −10 mA 0.22 0.25 Ω max On-Resistance Flatness, RFLAT(ON) 0.9 Ω typ VS = ±4.5 V, IS = −10 mA 1.1 1.31 Ω max Continuous Current Per Channel1 240 100 mA max VDD = +4.5 V, VSS = −4. 5 V LEAKAGE CURRENTS VDD = +5.5 V, VSS = −5.5 V Source Off Leakage, IS (Off) ±0.03 nA typ VS = ±4.5 V, VD = ∓4.5 V ±0.2 ±12.5 nA max Drain Off Leakage, ID (Off) ±0.03 nA typ VS = ±4.5 V, VD = ∓4.5 V ±0.2 ±12.5 nA max Channel On Leakage, ID, IS (On) ±0.05 nA typ VS = VD = ±4.5 V ±0.25 ±35 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.001 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3.5 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 310 ns typ RL = 300 Ω, CL = 35 pF 445 565 ns max VS = 3 V Break-Before-Make Time Delay, tBBM 80 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 3 V Charge Injection 30 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF Off Isolation −80 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz Channel-to-Channel Crosstalk −80 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz Total Harmonic Distortion + Noise 0.03 % typ RL = 110 Ω, 2.5 V pp, f = 20 Hz to 20 kHz −3 dB Bandwidth 85 MHz typ RL = 50 Ω, CL = 5 pF Insertion Loss −0.28 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz CS (Off) 33 pF typ VS = 0 V, f = 1 MHz CD (Off) 65 pF typ VS = 0 V, f = 1 MHz CD, CS (On) 145 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +5.5 V, VSS = −5.5 V IDD 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1.0 µA max VDD/VSS ±4.5/±16.5 V min/max GND = 0 V 1 Guaranteed by design, not subject to production test. Rev. 0 | Page 5 of 10 Document Outline Features Applications Enhanced Product Features Functional Block Diagram General Description Revision History Specifications 15 V Dual Supply 12 V Single Supply 5 V Dual Supply Absolute Maximum Ratings Thermal Resistance ESD Caution Pin Configurations and Function Descriptions Truth Table For Switches Typical Performance Characteristics Outline Dimensions Ordering Guide
