Datasheet ADG1236 (Analog Devices)
| Manufacturer | Analog Devices |
| Description | Low Capacitance, Low Charge Injection, ±15 V/12 V iCMOS, Dual SPDT Switch |
| Pages / Page | 16 / 1 — Low Capacitance, Low Charge Injection,. ±15 V/12 V. CMOS, Dual SPDT … |
| Revision | A |
| File Format / Size | PDF / 351 Kb |
| Document Language | English |
Low Capacitance, Low Charge Injection,. ±15 V/12 V. CMOS, Dual SPDT Switch. Data Sheet. ADG1236. FEATURES. FUNCTIONAL BLOCK DIAGRAM
Model Line for this Datasheet
Text Version of Document
Low Capacitance, Low Charge Injection, ±15 V/12 V
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CMOS, Dual SPDT Switch Data Sheet ADG1236 FEATURES FUNCTIONAL BLOCK DIAGRAM 1.3 pF off capacitance ADG1236 3.5 pF on capacitance S1A 1 pC charge injection D1 33 V supply range S1B 120 Ω on resistance IN1 Fully specified at +12 V, ±15 V No VL supply required IN2 3 V logic-compatible inputs Rail-to-rail operation S2A 16-lead TSSOP and 12-lead LFCSP packages D2 Typical power consumption: <0.03 µW S2B APPLICATIONS SWITCHES SHOWN FOR A LOGIC 1 INPUT
04776-001
Automatic test equipment
Figure 1.
Data acquisition systems Battery-powered systems Sample-and-hold systems Audio/video signal routing Communication systems GENERAL DESCRIPTION
The ADG1236 is a monolithic CMOS device containing two Each switch conducts equally wel in both directions when on independently selectable SPDT switches. It is designed on an and has an input signal range that extends to the supplies. In the iCMOS® process. iCMOS (industrial CMOS) is a modular off condition, signal levels up to the supplies are blocked. Both manufacturing process combining high voltage complementary switches exhibit break-before-make switching action for use in metal-oxide semiconductor (CMOS) and bipolar technologies. multiplexer applications. It enables the development of a wide range of high performance
PRODUCT HIGHLIGHTS
analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage devices has been able to 1. 1.3 pF off capacitance (±15 V supply). achieve. Unlike analog ICs using conventional CMOS processes, 2. 1 pC charge injection. iCMOS components can tolerate high supply voltages while 3. 3 V logic-compatible digital inputs: VIH = 2.0 V, VIL = 0.8 V. providing increased performance, dramatically lower power 4. No VL logic power supply required. consumption, and reduced package size. 5. Ultralow power dissipation: <0.03 µW. 6. 16-lead TSSOP and 12-lead 3 mm × 3 mm LFCSP packages. The ultralow capacitance and charge injection of the device make it an ideal solution for data acquisition and sample-and- hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth makes the device suitable for video signal switching. iCMOS construction ensures ultralow power dissipation, making the device ideally suited for portable and battery-powered instruments.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2005–2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION TRUTH TABLE FOR SWITCHES PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TERMINOLOGY TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
i
CMOS, Dual SPDT Switch Data Sheet ADG1236 FEATURES FUNCTIONAL BLOCK DIAGRAM 1.3 pF off capacitance ADG1236 3.5 pF on capacitance S1A 1 pC charge injection D1 33 V supply range S1B 120 Ω on resistance IN1 Fully specified at +12 V, ±15 V No VL supply required IN2 3 V logic-compatible inputs Rail-to-rail operation S2A 16-lead TSSOP and 12-lead LFCSP packages D2 Typical power consumption: <0.03 µW S2B APPLICATIONS SWITCHES SHOWN FOR A LOGIC 1 INPUT
04776-001
Automatic test equipment
Figure 1.
Data acquisition systems Battery-powered systems Sample-and-hold systems Audio/video signal routing Communication systems GENERAL DESCRIPTION
The ADG1236 is a monolithic CMOS device containing two Each switch conducts equally wel in both directions when on independently selectable SPDT switches. It is designed on an and has an input signal range that extends to the supplies. In the iCMOS® process. iCMOS (industrial CMOS) is a modular off condition, signal levels up to the supplies are blocked. Both manufacturing process combining high voltage complementary switches exhibit break-before-make switching action for use in metal-oxide semiconductor (CMOS) and bipolar technologies. multiplexer applications. It enables the development of a wide range of high performance
PRODUCT HIGHLIGHTS
analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage devices has been able to 1. 1.3 pF off capacitance (±15 V supply). achieve. Unlike analog ICs using conventional CMOS processes, 2. 1 pC charge injection. iCMOS components can tolerate high supply voltages while 3. 3 V logic-compatible digital inputs: VIH = 2.0 V, VIL = 0.8 V. providing increased performance, dramatically lower power 4. No VL logic power supply required. consumption, and reduced package size. 5. Ultralow power dissipation: <0.03 µW. 6. 16-lead TSSOP and 12-lead 3 mm × 3 mm LFCSP packages. The ultralow capacitance and charge injection of the device make it an ideal solution for data acquisition and sample-and- hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth makes the device suitable for video signal switching. iCMOS construction ensures ultralow power dissipation, making the device ideally suited for portable and battery-powered instruments.
Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Tel: 781.329.4700 ©2005–2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION TRUTH TABLE FOR SWITCHES PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TERMINOLOGY TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE
