Datasheet BCV62 (Nexperia) - 3
| Manufacturer | Nexperia |
| Description | PNP General-Purpose Double Transistors |
| Pages / Page | 14 / 3 — Nexperia. BCV62. PNP general-purpose double transistors. 5. Limiting. … |
| File Format / Size | PDF / 816 Kb |
| Document Language | English |
Nexperia. BCV62. PNP general-purpose double transistors. 5. Limiting. values. Table 6. Limiting values. Symbol. Parameter. Conditions. Min
Model Line for this Datasheet
Text Version of Document
link to page 3 link to page 3
Nexperia BCV62 PNP general-purpose double transistors 5. Limiting values Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per transistor
VCBO collector-base voltage open emitter - −30 V VCEO collector-emitter voltage open base - −30 V VEBS emitter-base voltage VCE = 0 V - −6 V IC collector current - −100 mA ICM peak collector current - −200 mA IBM peak base current - −200 mA
Per device
P ≤ tot total power dissipation Tamb 25 °C [1] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction in free air [1] - - 500 K/W to ambient [1] Device mounted on an FR4 PCB.
7. Characteristics Table 8. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Transistor TR1
ICBO collector-base VCB = −30 V; IE = 0 A - - −15 nA cut-off current VCB = −30 V; IE = 0 A; - - −5 μA Tj = 150 °C IEBO emitter-base VEB = −5 V; IC = 0 A - - −100 nA cut-off current hFE DC current gain VCE = −5 V; 100 - - IC = −100 μA VCE = −5 V; IC = −2 mA 100 - 800 VCEsat collector-emitter IC = −10 mA; - −75 −300 mV saturation voltage IB = −0.5 mA IC = −100 mA; - −250 −650 mV IB = −5 mA BCV62 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 4 — 26 July 2010 3 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
Nexperia BCV62 PNP general-purpose double transistors 5. Limiting values Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit Per transistor
VCBO collector-base voltage open emitter - −30 V VCEO collector-emitter voltage open base - −30 V VEBS emitter-base voltage VCE = 0 V - −6 V IC collector current - −100 mA ICM peak collector current - −200 mA IBM peak base current - −200 mA
Per device
P ≤ tot total power dissipation Tamb 25 °C [1] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction in free air [1] - - 500 K/W to ambient [1] Device mounted on an FR4 PCB.
7. Characteristics Table 8. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Transistor TR1
ICBO collector-base VCB = −30 V; IE = 0 A - - −15 nA cut-off current VCB = −30 V; IE = 0 A; - - −5 μA Tj = 150 °C IEBO emitter-base VEB = −5 V; IC = 0 A - - −100 nA cut-off current hFE DC current gain VCE = −5 V; 100 - - IC = −100 μA VCE = −5 V; IC = −2 mA 100 - 800 VCEsat collector-emitter IC = −10 mA; - −75 −300 mV saturation voltage IB = −0.5 mA IC = −100 mA; - −250 −650 mV IB = −5 mA BCV62 All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 4 — 26 July 2010 3 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
